900V N CHANNEL MOSFET KIA Semicon Tech KNF4390A designed for fast recovery diode applications
Key Attributes
Model Number:
KNF4390A
Product Custom Attributes
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
4A
RDS(on):
3.6Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
26pF
Input Capacitance(Ciss):
495pF
Output Capacitance(Coss):
52pF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
KNF4390A
Package:
TO-220F
Product Description
Product Overview
The KIA SEMICONDUCTORS 4390A is a 900V N-CHANNEL MOSFET designed with proprietary new planar technology. It features low gate charge to minimize switching loss and a fast recovery body diode. This MOSFET is suitable for applications such as CRT, TV/Monitor, and other general electronic applications.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units | TO-252 | TO-220F |
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250uA | 900 | - | - | V | ||
| Gate-source voltage | VGSS | - | - | ±30 | V | |||
| Drain-source leakage current | IDSS | VDS=900V, VGS=0V | - | - | 1 | uA | ||
| Gate-source forward leakage | IGSS | VGS=±30V, VDS=0V | - | - | ±100 | nA | ||
| Drain-source on-resistance | RDS(on) | VGS=10V,ID=2.0A | - | 3.6 | 4.8 | Ω | ||
| Gate threshold voltage | VGS(TH) | VDS=VGS,ID=250uA | 2.0 | - | 4.0 | V | ||
| Forward Transconductance | gfs | VDS=15V,ID=4.0A | - | 5.5 | - | S | ||
| Input capacitance | Ciss | VDS=25V,VGS=0V f=1MHz | - | 495 | - | pF | ||
| Reverse transfer capacitance | Crss | VDS=25V,VGS=0V f=1MHz | - | 26 | - | pF | ||
| Output capacitance | Coss | VDS=25V,VGS=0V f=1MHz | - | 52 | - | pF | ||
| Total gate charge(10V) | Qg | VDD=400V, ID=4A VGS=0~10V | - | 15 | - | nC | ||
| Gate-source charge | Qgs | VDD=400V, ID=4A VGS=0~10V | - | 3.1 | - | nC | ||
| Gate-drain charge | Qgd | VDD=400V, ID=4A VGS=0~10V | - | 6.2 | - | nC | ||
| Turn-on delay time | td(on) | VDD=400V,VGS=10V, RG=12Ω, ID=4A | - | 11 | - | ns | ||
| Rise time | tr | VDD=400V,VGS=10V, RG=12Ω, ID=4A | - | 11 | - | ns | ||
| Turn-off delay time | td(off) | VDD=400V,VGS=10V, RG=12Ω, ID=4A | - | 32 | - | ns | ||
| Fall time | tf | VDD=400V,VGS=10V, RG=12Ω, ID=4A | - | 16 | - | ns | ||
| Continuous Source Current | ISD | Integral PN-diode in MOSFET | - | 4.0 | - | A | ||
| Pulsed Source Current | ISM | Integral PN-diode in MOSFET | - | - | 16 | A | ||
| Diode forward voltage | VSD | IS=4.0A,VGS=0V | - | - | 1.5 | V | ||
| Reverse Recovery Time | trr | VGS=0V,IF=4.0A, dIF/dt=100A/μs | - | 135 | - | nS | ||
| Reverse Recovery Charge | Qrr | VGS=0V,IF=4.0A, dIF/dt=100A/μs | - | 446 | - | nC | ||
| Thermal resistance junction-case | RθJC | - | 1.38 | 4.17 | ºC/W | X | X | |
| Thermal Resistance, Junction-to-Ambient | RθJA | - | 75 | 100 | ºC/W | X | X | |
| Drain-source voltage | VDSS | TC=25ºC unless otherwise noted | - | - | 900 | V | X | X |
| Continuous drain current | ID | TC=25ºC | - | 4 | - | A | X | X |
| Continuous drain current | ID | TC=100ºC | - | - | 3 | A | X | X |
| Pulsed Drain Current | IDM | at VGS=10V | - | - | 16 | A | X | X |
| Single pulse avalanche energy | EAS | - | - | 650 | mJ | X | X | |
| Peak Diode Recovery dv/dt | dv/dt | ISD=4A di/dt<100 A/us, VDD<BVDSS, TJ=150 ºC | - | 5.0 | - | V/ns | X | X |
| Power dissipation | PD | TC=25ºC | - | 90 | 30 | W | X | X |
| Derate above 25ºC | - | 0.72 | 0.24 | W/ºC | X | X | ||
| Maximum Temperature for Soldering | TL | Leads at 0.063in (1.6mm) from Case for 10 seconds | - | - | 300 | ºC | X | X |
| Maximum Temperature for Soldering | TPAK | Package Body for 10 seconds | - | - | 260 | ºC | X | X |
| Operating junction and storage temperature range | TJ ,TSTG | -55 | - | 150 | ºC | X | X |
2508261745_KIA-Semicon-Tech-KNF4390A_C7465116.pdf
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