Power Switching Solutions Featuring KIA Semicon Tech KNP2908B N Channel MOSFET with Trench Technology
Key Attributes
Model Number:
KNP2908B
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
380pF
Number:
1 N-channel
Output Capacitance(Coss):
460pF
Input Capacitance(Ciss):
7.95nF
Gate Charge(Qg):
160nC@10V
Mfr. Part #:
KNP2908B
Package:
TO-220
Product Description
Product Overview
The KIA SEMICONDUCTORS KNX2908B and KNP2908B are N-CHANNEL MOSFETs utilizing advanced trench technology. They offer excellent RDS(ON) and low gate charge, making them suitable for a wide range of power switching applications, including hard switched and high frequency circuits, as well as uninterruptible power supplies. These MOSFETs are characterized by their high density cell design for lower Rdson, fully characterized avalanche voltage and current, and good stability with high EAS. The package is designed for effective heat dissipation.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
- Product Series: 2908B
- Part Numbers: KNB2908B, KNP2908B
- Package Types: TO-263, TO-220
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| Drain-source voltage | VDS | 80 | V | |||
| Gate-source voltage | VGS | +20 | V | |||
| Continuous drain current | ID | 130 | A | |||
| Pulsed drain current (Note1) | IDM | 520 | A | |||
| Single pulse avalanche energy(Note2) | EAS | 900 | mJ | |||
| Operation junction and temperature range | TJ, TSTG | -55 | 175 | C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 0.61 | C /W | |||
| Electrical Characteristics (TA=25C, unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250A | 80 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=80V, VGS=0V | - | - | 1 | A |
| Gate-Soure Forward Leakage | IGSS(F) | VGS=+20V | - | - | 100 | nA |
| Gate-Soure Reverse Leakage | IGSS(R) | VGS=-20V | - | - | -100 | nA |
| On Characteristics | ||||||
| Drain-source on-Resistance(Note3) | RDS(on) | VGS=10V,ID=35A | - | 5.0 | 6.0 | m |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 2.0 | 2.9 | 4.0 | V |
| Forward Transconductance | gfs | VDS=5V,ID=20A | - | 42 | - | S |
| Dynamic Characteristics | ||||||
| Total gate charge | Qg | VDD=40V, VGS=10V, ID =20A | - | 160 | - | nC |
| Gate-source charge | Qgs | - | 31 | - | ||
| Gate-drain charge | Qg d | - | 50 | - | ||
| Turn-on delay time | td(on) | VDD=30V, ID=40A, RGEN=3, VGS=10V | - | 24 | - | ns |
| Rise time | tr | - | 41 | - | ||
| Turn-off delay time | td(off) | - | 75 | - | ||
| Fall time | tf | - | 25 | - | ||
| Switching Characteristics (Note 4) | ||||||
| Input capacitance | Ciss | VDS=25V,VGS=0V, f=1MHz | - | 7950 | - | pF |
| Output capacitance | Coss | - | 460 | - | ||
| Reverse transfer capacitance | Crss | - | 380 | - | ||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward voltage | VSD | VGS=0V,IS=20A | - | - | 1.3 | V |
2409302301_KIA-Semicon-Tech-KNP2908B_C2896651.pdf
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