High Voltage KIA Semicon Tech KNF6180A 10A 800V N Channel MOSFET with Fast Recovery Diode Technology
Key Attributes
Model Number:
KNF6180A
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
1Ω@10V,4A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
25pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.91nF@25V
Pd - Power Dissipation:
55W
Gate Charge(Qg):
-
Mfr. Part #:
KNF6180A
Package:
TO-220F
Product Description
Product Overview
The KIA KNX6180A is a 10A, 800V N-CHANNEL MOSFET featuring proprietary new planar technology. It offers a low Gate Charge to minimize switching loss and a fast recovery body diode. This MOSFET is ideal for applications such as ATX Power supplies and LCD Panel Power.
Product Attributes
- Brand: KIA
- Part Number: KNX6180A
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Symbol | Parameter | TO-220 | TO-220F | Unit |
| Absolute Maximum Ratings | ||||
| VDSS | Drain-to-Source Voltage | 800 | 800 | V |
| VGSS | Gate-to-Source Voltage | 30 | V | |
| ID | Continuous Drain Current | 10 | A | |
| IDM | Pulsed Drain Current at VGS=10V | Figure6 | ||
| EAS | Single Pulse Avalanche Energy | 460 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns | |
| PD | Power Dissipation | 160 | 55 | W |
| Derating Factor above 25 C | 1.28 | 0.44 | W/ C | |
| TL | Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds | 300 | C | |
| TPAK | Package Body for 10 seconds | 260 | C | |
| TJ&TSTG | Operating and Storage Temperature Range | -55 to 150 | C | |
| Thermal Characteristics | ||||
| RJC | Thermal Resistance, Junction-to-Case | 0.78 | 2.27 | C /W |
| RJA | Thermal Resistance, Junction-to-Ambient | 62 | 100 | |
| Electrical Characteristics - OFF | ||||
| BVDSS | Drain-to-Source Breakdown Voltage | 800 | V | |
| IDSS | Drain-to-Source Leakage Current | 1 | uA | |
| IGSS | Gate-to-Source Leakage Current | 100 | nA | |
| Electrical Characteristics - ON | ||||
| RDS(ON) | Static Drain-to-Source On-Resistance | 1.0 | ||
| VGS(TH) | Gate Threshold Voltage | 2.0 - 4.0 | V | |
| gFS | Forward Transconductance | 22 | S | |
| Electrical Characteristics - Dynamic | ||||
| Ciss | Input Capacitance | 2910 | pF | |
| Coss | Output Capacitance | 195 | pF | |
| Crss | Reverse Transfer Capacitance | 25 | pF | |
| Qg | Total Gate Charge | 60 | nC | |
| Qgs | Gate-to-Source Charge | 12 | nC | |
| Qgd | Gate-to-Drain (Miller) Charge | 21 | nC | |
| Resistive Switching Characteristics | ||||
| td(ON) | Turn-on Delay Time | 20 | nS | |
| trise | Rise Time | 10 | nS | |
| td(OFF) | Turn-Off Delay Time | 68 | nS | |
| tfall | Fall Time | 23 | nS | |
| Source-Drain Body Diode Characteristics | ||||
| ISD | Continuous Source Current | 10 | A | |
| ISM | Pulsed Source Current | 40 | A | |
| VSD | Diode Forward Voltage | 1.5 | V | |
| trr | Reverse recovery time | 200 | ns | |
| Qrr | Reverse recovery charge | 2.2 | uC | |
| Part Number | Package | Brand |
| KNP6180A | TO-220 | KIA |
| KNF6180A | TO-220F | KIA |
2409302302_KIA-Semicon-Tech-KNF6180A_C709690.pdf
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