25A 500V N channel MOSFET KIA Semicon Tech KNH7650A designed for switching in motor drivers and SMPS
Key Attributes
Model Number:
KNH7650A
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-55℃~+150℃
RDS(on):
170mΩ@10V,14A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
185pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.28nF@25V
Pd - Power Dissipation:
290W
Gate Charge(Qg):
76nC@10V
Mfr. Part #:
KNH7650A
Package:
TO-3P
Product Description
Product Overview
The KIA SEMICONDUCTORS KNX7650A is a 25A, 500V N-CHANNEL MOSFET featuring an advanced planar process, low gate charge for minimized switching loss, and a rugged polysilicon gate structure. It is designed for high-efficiency applications such as BLDC motor drivers, electric welders, and high-efficiency SMPS.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units | TO-220F | TO-3P |
| Drain-to-Source Voltage | VDSS | 500 | V | ✔ | ✔ | |||
| Gate-to-Source Voltage | VGSS | ±30 | V | ✔ | ✔ | |||
| Continuous Drain Current | ID | TC=25 C | 25 | A | ✔ | ✔ | ||
| Continuous Drain Current @ Tc=100 C | ID | 16 | A | ✔ | ✔ | |||
| Pulsed Drain Current | IDM | VGS=10V | 100 | A | ✔ | ✔ | ||
| Single Pulse Avalanche Energy | EAS | 1800 | mJ | ✔ | ✔ | |||
| Peak Diode Recovery dv/dt | dv/dt | 5.0 | V/ns | ✔ | ✔ | |||
| Power Dissipation | PD | 105 | W | ✔ | ||||
| Power Dissipation | PD | 290 | W | ✔ | ||||
| Derating Factor above 25 C | 0.84 | W/ C | ✔ | |||||
| Derating Factor above 25 C | 2.33 | W/ C | ✔ | |||||
| Maximum Temperature for Soldering Leads | TL | 0.063in (1.6mm) from Case for 10 seconds | 300 | C | ✔ | ✔ | ||
| Maximum Temperature for Soldering Package Body | TPAK | for 10 seconds | 260 | C | ✔ | ✔ | ||
| Operating and Storage Temperature Range | TJ& TSTG | -55 | 150 | C | ✔ | ✔ | ||
| Thermal resistance, junction-ambient | RJA | 100 | C/W | ✔ | ||||
| Thermal resistance, Junction-case | RJC | 1.19 | C/W | ✔ | ||||
| Thermal resistance, Junction-case | RJC | 0.43 | C/W | ✔ | ||||
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250A | 500 | V | ✔ | ✔ | ||
| Drain-to-source Leakage Current | IDSS | VDS=500V ,VGS=0V | 1 | A | ✔ | ✔ | ||
| Drain-to-source Leakage Current | IDSS | VDS=400V , VGS=0V, TC=125C | 125 | A | ✔ | ✔ | ||
| Gate-body leakage current | IGSS | VGS=30V,VDS=0V | 100 | nA | ✔ | ✔ | ||
| Gate-body leakage current | IGSS | VGS=-30V,VDS=0V | -100 | nA | ✔ | ✔ | ||
| Static drain-source on-resistance | RDS(on) | VGS=10V,ID=14A | 170 | 210 | m | ✔ | ✔ | |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 2.0 | 4.0 | V | ✔ | ✔ | |
| Forward Transconductance | gfs | VDS=30V,ID=14A | 30 | S | ✔ | ✔ | ||
| Input capacitance | Ciss | VDS=25V,VGS=0V, f=1MHz | 4280 | pF | ✔ | ✔ | ||
| Output capacitance | Coss | VDS=25V,VGS=0V, f=1MHz | 1400 | pF | ✔ | ✔ | ||
| Reverse transfer capacitance | Crss | VDS=25V,VGS=0V, f=1MHz | 185 | pF | ✔ | ✔ | ||
| Turn-on delay time | td(on) | VDD=250V,ID=14A, VGS=10V,RG=10 | 24 | ns | ✔ | ✔ | ||
| Rise time | tr | VDD=250V,ID=14A, VGS=10V,RG=10 | 40 | ns | ✔ | ✔ | ||
| Turn-off delay time | td(off) | VDD=250V,ID=14A, VGS=10V,RG=10 | 100 | ns | ✔ | ✔ | ||
| Fall time | tf | VDD=250V,ID=14A, VGS=10V,RG=10 | 35 | ns | ✔ | ✔ | ||
| Total gate charge | Qg | VDS=250V,ID=28A , VGS=0 to10V | 76 | nC | ✔ | ✔ | ||
| Gate-source charge | Qgs | VDS=250V,ID=28A , VGS=0 to10V | 20 | nC | ✔ | ✔ | ||
| Gate-drain charge | Qgd | VDS=250V,ID=28A , VGS=0 to10V | 19 | nC | ✔ | ✔ | ||
| Drain-source diode forward voltage | VSD | VGS=0V,Is=18A | 1.5 | V | ✔ | ✔ | ||
| Continuous drain-source current | ISD | Integral pn-diode In MOSFET | 25 | A | ✔ | ✔ | ||
| Pulsed drain-source current | ISM | Integral pn-diode In MOSFET | 100 | A | ✔ | ✔ | ||
| Reverse recovery time | trr | VGS=0V,IF=28A DlF/dt=100A/s | 530 | ns | ✔ | ✔ | ||
| Reverse recovery charge | Qrr | VGS=0V,IF=28A DlF/dt=100A/s | 4.5 | C | ✔ | ✔ |
2410010001_KIA-Semicon-Tech-KNH7650A_C443720.pdf
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