N channel MOSFET KIA Semicon Tech KND4665B designed for power switching in switched mode power supplies
Key Attributes
Model Number:
KND4665B
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
1.1Ω@10V,3.5A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
21pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.048nF@25V
Pd - Power Dissipation:
75W
Gate Charge(Qg):
-
Mfr. Part #:
KND4665B
Package:
TO-252
Product Description
Product Overview
The KNX4665B is a N-channel enhancement mode silicon gate power MOSFET designed for high voltage, high speed power switching applications. It is suitable for use in high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology. Key features include ROHS compliance, low gate charge for minimized switching loss, and a fast recovery body diode.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Certifications: ROHS Compliant
Technical Specifications
| Parameter | Symbol | TO252 | TO220F | Unit |
| Absolute Maximum Ratings (TC=25 unless otherwise specified) | ||||
| Drain-to-Source Voltage | VDSS | 650 | 650 | V |
| Gate-to-Source Voltage | VGSS | 30 | V | |
| Continuous Drain Current | ID | 7.0* | 7.0 | A |
| Pulsed Drain Current at VGS=10V | IDM | 28* | 28 | A |
| Single Pulse Avalanche Energy | EAS | 400 | mJ | |
| Power Dissipation | PD | 75 | 42 | W |
| Derating Factor above 25 C | 0.61 | 0.34 | W/ C | |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds | TL | 300 | C | |
| Maximum Temperature for Soldering Package Body for 10 seconds | TPAK | 260 | C | |
| Operating and Storage Temperature Range | TJ & TSTG | -55 to 150 | C | |
| Thermal Characteristics | ||||
| Thermal resistance, junction-ambient | RJA | 100 | C/W | |
| Thermal resistance, Junction-case | RJC | 1.65 | 2.98 | C/W |
| Electrical Characteristics (TJ=25C, unless otherwise noted) | ||||
| Drain-source breakdown voltage | BVDSS | 650 | - | V |
| Drain-to-source Leakage Current | IDSS | - | 1 | A |
| Gate-body leakage current | IGSS | - | 1.0 | uA |
| Static drain-source on-resistance | RDS(on) | 1.1 | 1.4 | |
| Gate threshold voltage | VGS(th) | 2.0 | 4.0 | V |
| Forward Transconductance | gfs | 12 | - | S |
| Dynamic Characteristics | ||||
| Input capacitance | Ciss | 1048 | - | pF |
| Output capacitance | Coss | 98 | - | pF |
| Reverse transfer capacitance | Crss | 21 | - | pF |
| Total gate charge | Qg | 24 | - | nC |
| Gate-source charge | Qgs | 6 | - | nC |
| Gate-drain charge | Qgd | 10 | - | nC |
| Drain-source diode characteristics | ||||
| Drain-source diode forward voltage | VSD | - | 1.5 | V |
| Continuous drain-source current [2] | ISD | - | 7.0 | A |
| Pulsed drain-source current[2] | ISM | - | 28 | A |
| Reverse recovery time | trr | - | 250 | ns |
| Reverse recovery charge | Qrr | - | 1400 | nC |
2410010001_KIA-Semicon-Tech-KND4665B_C709686.pdf
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