N channel MOSFET KIA Semicon Tech KIA3414 with trench technology and low gate threshold voltage
Key Attributes
Model Number:
KIA3414
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-
RDS(on):
63mΩ@2.5V,3.7A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
44pF
Number:
1 N-channel
Input Capacitance(Ciss):
436pF
Output Capacitance(Coss):
66pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
6.2nC@4.5V
Mfr. Part #:
KIA3414
Package:
SOT-23
Product Description
Product Overview
The KIA3414 is an N-CHANNEL MOSFET utilizing advanced trench technology. It offers excellent RDS(on) and low gate charge, with operation possible at gate voltages as low as 1.8V. This device is well-suited for applications such as load switches or PWM control. It is a standard product, Pb-free, and meets ROHS & Sony 259 specifications, with a Green Product ordering option available. The KIA3414 is electrically identical across its variants.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: KIA3414
- Channel Type: N-CHANNEL
- Certifications: Pb-free (ROHS & Sony 259 specifications)
- Environmental: Green Product option
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250A | 20 | - | - | V |
| Zero gate voltage drain current | IDSS | VDS=16V, VGS=0V | - | - | 1 | A |
| Gate-body leakage current | IGSS | VGS=+12V, VDS=0V | - | - | 100 | nA |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 0.4 | 0.6 | 1 | V |
| On state drain current | ID(on) | VGS=4.5V, VDS=5V | 15 | - | - | A |
| Static drain-source on-resistance | RDS(on) | VGS=4.5V,ID=4.2A | - | 41 | 50 | m |
| Static drain-source on-resistance | RDS(on) | VGS=2.5V,ID=3.7A | - | 52 | 63 | m |
| Forward transconductance | gfs | VDS=5.0V, ID=4.2A | - | 8.0 | - | S |
| Diode forward voltage | VSD | VGS=0V,IS=1A | - | 0.76 | 1.2 | V |
| Maximum body-diode continuous current | IS | - | - | - | 2 | A |
| Input capacitance | Ciss | VDS=10V,VGS=0V, f=1MHz | - | 436 | - | pF |
| Output capacitance | Coss | - | - | 66 | - | pF |
| Reverse transfer capacitance | Crss | - | - | 44 | - | pF |
| Gate resistance | Rg | VDS=0V, VGS=0V,f=1MHz | - | 3 | - | |
| Total gate charge | Qg | VDS=10V, VGS=4.5V ID =4.2A | - | 6.2 | - | nC |
| Gate-source charge | Qgs | - | - | 1.6 | - | - |
| Gate-drain charge | Qgd | - | - | 0.5 | - | - |
| Turn-on delay time | td(on) | VDS=10V, RL=2.7,, RG=6, VGS=5V | - | 5.5 | - | ns |
| Rise time | tr | - | - | 6.3 | - | - |
| Turn-off delay time | td(off) | - | - | 40 | - | - |
| Fall time | tf | - | - | 12.7 | - | - |
| Reverse recovery time | trr | IF=4.0A,dI/dt=100A/s, | - | 12.3 | - | nS |
| Reverse recovery charge | Qrr | - | - | 3.5 | - | nC |
2410010000_KIA-Semicon-Tech-KIA3414_C116045.pdf
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