P Channel MOSFET KIA Semicon Tech KPD3606A Featuring High Cell Density Trench Technology and Low RDS
Key Attributes
Model Number:
KPD3606A
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
17mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
240pF@30V
Number:
1 P-Channel
Pd - Power Dissipation:
90W
Input Capacitance(Ciss):
4.64nF@30V
Gate Charge(Qg):
86nC@10V
Mfr. Part #:
KPD3606A
Package:
TO-252
Product Description
Product Overview
This P-CHANNEL MOSFET offers high performance with a low RDS(ON) of 11.6m (typ.) at VGS=-10V, super low gate charge, and 100% EAS guaranteed. It features excellent CdV/dt effect decline and is built with advanced high cell density Trench technology. The device is available as a Green Device.
Product Attributes
- Brand: KIA
- Part Number: KPD3606A
- Package: TO-252
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-48V, VGS=0V | - | - | -1 | uA |
| Zero Gate Voltage Drain Current | IDSS | VDS=-48V, TJ=55C | - | - | -5 | uA |
| Gate-Body Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Forward Transconductance | gfs | VDS=-10V,ID=-18A | - | 43 | - | S |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=-250A | -1.0 | - | -2.5 | V |
| Gate Threshold Voltage Temperature Coefficient | VGS(TH) | VDS=VGS, ID=-250A | - | 4.28 | - | mV/C |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-18A | - | 11.6 | 14 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-12A | - | 14 | 17 | m |
| Gate Resistance | Rg | VDS=0V, VGS=0V, f=1MHz | - | 2.6 | - | |
| Input Capacitance | Ciss | VDS=-30V, VGS=0V, f=1MHz | - | 4640 | - | pF |
| Output Capacitance | Coss | VDS=-30V, VGS=0V, f=1MHz | - | 526 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=-30V, VGS=0V, f=1MHz | - | 240 | - | pF |
| Total Gate Charge | Qg | VDS=-30V ID=-12A, VGS=-10V | - | 86 | - | nC |
| Gate Source Charge | Qgs | VDS=-30V ID=-12A, VGS=-10V | - | 10 | - | nC |
| Gate Drain Charge | Qg | VDS=-30V ID=-12A, VGS=-10V | - | 32 | - | nC |
| Turn-on Delay Time | td(on) | VDD=-30V, ID=-1A, RG=6, VGS=-10V | - | 20 | - | nS |
| Turn-on Rise Time | tr | VDD=-30V, ID=-1A, RG=6, VGS=-10V | - | 15 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=-30V, ID=-1A, RG=6, VGS=-10V | - | 100 | - | nS |
| Turn-Off Fall Time | tf | VDD=-30V, ID=-1A, RG=6, VGS=-10V | - | 70 | - | nS |
| Continuous Source Current | IS | VG=VD=0V , Force Current | - | - | -40 | A |
| Forward on voltage | VSD | IS=-1A, VGS=0V | - | - | -1.2 | V |
| Drain-Source Breakdown Voltage | VD | - | -60 | - | - | V |
| Gate-Source Voltage | VGS | - | - | 20 | - | V |
| Continuous Drain Current | ID | VGS@-10V, TC=25C | - | - | -60 | A |
| Continuous Drain Current | ID | VGS@-10V, TC=100C | - | - | -35 | A |
| Pulse Drain Current | IDM | Tested | - | - | -170 | A |
| Single Pulse Avalanche Energy | EAS | 330 | mJ | |||
| Avalanche Current | IAS | -40 | A | |||
| Maximum Power Dissipation | PD | @ TC=25C | - | - | 90 | W |
| Operating Junction and Storage Temperature Range | TJ,TSTG | - | -55 | - | 150 | C |
| Thermal Resistance, Junction-to-Ambient | RJA | 1) | - | - | 62 | C/W |
| Thermal Resistance, Junction-to-Case | RJC | 1) | - | 1.4 | - | C/W |
2411121110_KIA-Semicon-Tech-KPD3606A_C41369560.pdf
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