Low gate charge power MOSFET KIA Semicon Tech KIA3400 N channel type for load switch and PWM functions
Key Attributes
Model Number:
KIA3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.8A
Operating Temperature -:
-
RDS(on):
55mΩ@2.5V,3.5A
Gate Threshold Voltage (Vgs(th)):
-
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 N-channel
Input Capacitance(Ciss):
823pF
Output Capacitance(Coss):
66pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
12nC@4.5V
Mfr. Part #:
KIA3400
Package:
SOT-23
Product Description
Product Overview
The KIA3400 is an N-CHANNEL MOSFET featuring advanced trench technology for excellent RDS(on) and low gate charge, capable of operating with gate voltages as low as 2.5V. It is suitable for use as a load switch or in PWM applications. This is a standard, Pb-free product meeting ROHS & Sony 259 specifications, available as a Green Product option.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: KIA3400
- Type: N-CHANNEL MOSFET
- Certifications: ROHS & Sony 259 specifications
- Product Status: Pb-free, Green Product
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Drain-source voltage | VDS | 30 | V | |||
| Gate-source voltage | VGS | +12 | V | |||
| Continuous drain current | ID | TA=25C | 4.8 | A | ||
| Pulsed drain current | IDM | 30 | A | |||
| Total power dissipation | PD | TA=25 C | 1.4 | W | ||
| Total power dissipation | PD | TA=70C | 1 | W | ||
| Junction and storage temperature range | TJ ,TSTG | -55 | 150 | C | ||
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250A | 30 | - | - | V |
| Zero gate voltage drain current | IDSS | VDS=25V, VGS=0V | - | - | 1 | A |
| Gate- body leakage current | IGSS | VGS=+12V, VDS=0V | - | - | 100 | nA |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 0.6 | - | - | V |
| Static drain-source on-resistance | RDS(on) | VGS=10V,ID=4.8A | - | - | 40 | m |
| Static drain-source on-resistance | RDS(on) | VGS=4.5V,ID=4.0A | - | - | 42 | m |
| Static drain-source on-resistance | RDS(on) | VGS=2.5V,ID=3.5A | - | - | 55 | m |
| Forward transconductance | gfs | VDS=5V, ID=4.8A | 10 | 15 | - | S |
| Diode forward voltage | VSD | VGS=0V,IS=1A | - | 0.71 | 1.2 | V |
| Maximum body-diode continuous current | IS | - | - | 2.5 | A | |
| Input capacitance | Ciss | VDS=15V,VGS=0V, f=1MHz | - | 823 | 1030 | pF |
| Output capacitance | Coss | VDS=15V,VGS=0V, f=1MHz | - | 99 | - | pF |
| Reverse transfer capacitance | Crss | VDS=15V,VGS=0V, f=1MHz | - | 77 | - | pF |
| Gate resistance | Rg | VDS=0V, VGS=0V,f=1MHz | - | 1.2 | 3.6 | |
| Total gate charge | Qg | VDS=15V, VGS=4.5V ID =5.8A | - | 9.7 | 12 | nC |
| Gate-source charge | Qgs | VDS=15V, VGS=4.5V ID =5.8A | - | 1.6 | - | |
| Gate-drain charge | Qg d | VDS=15V, VGS=4.5V ID =5.8A | - | 3.1 | - | |
| Turn-on delay time | td(on) | VDS=15V, RL=2.7,, RG=3, VGS=10V | - | 3.3 | 5 | ns |
| Rise time | tr | VDS=15V, RL=2.7,, RG=3, VGS=10V | - | 4.8 | 7 | |
| Turn-off delay time | td(off) | VDS=15V, RL=2.7,, RG=3, VGS=10V | - | 26.3 | 40 | ns |
| Fall time | tf | VDS=15V, RL=2.7,, RG=3, VGS=10V | - | 4.1 | 6 | |
| Reverse recovery time | trr | IF=5A,dI/dt=100A/s | - | 16 | 20 | nS |
| Reverse recovery charge | Qrr | IF=5A,dI/dt=100A/s | - | 8.9 | 12 | nC |
2410010000_KIA-Semicon-Tech-KIA3400_C114182.pdf
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