High Current 110A 60V N Channel MOSFET KIA Semicon Tech KNP3106N for UPS and Power Factor Correction
Key Attributes
Model Number:
KNP3106N
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
110A
RDS(on):
8mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
1 N-channel
Output Capacitance(Coss):
1nF
Input Capacitance(Ciss):
2.6nF
Pd - Power Dissipation:
108W
Gate Charge(Qg):
480nC@15V
Mfr. Part #:
KNP3106N
Package:
TO-220
Product Description
Product Overview
The KIA SEMICONDUCTORS 3106N is a 110A, 60V N-CHANNEL MOSFET featuring proprietary new planar technology for fast switching and improved dv/dt capability. It is 100% avalanche tested and offers a low RDS(ON) of 7m (typ.) at VGS=10V. This MOSFET is suitable for applications such as Switch Mode Power Supply (SMPS), Uninterruptible Power Supply (UPS), and Power Factor Correction (PFC).
Product Attributes
- Brand: KIA
- Part Number: KNP3106N
- Package: TO-220
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| Drain-source voltage | VDSS | 60 | V | VGS=0V |
| Gate-to-Source Voltage | VGSS | 20 | V | |
| Continuous drain current | ID | 110 | A | TC=25C unless otherwise noted |
| Pulsed Drain Current | IDM | 440 | A | |
| Single pulse avalanche energy | EAS | 653 | mJ | L=1mH, VDD=50V, RG=25, Starting T=25C |
| Avalanche Current | IAS | 40 | A | |
| Repetitive Avalanche Energy | EAR | 391.8 | mJ | |
| Power dissipation | PD | 108 | W | TC=25C unless otherwise noted |
| Operating junction and storage temperature range | TJ ,TSTG | -55 to150 | C | |
| Thermal resistance junction-case | RJC | 0.65 | C/W | |
| Thermal Resistance, Junction-to-Ambient | RJA | 62 | C/W | |
| Drain-source breakdown voltage | BVDSS | 60 | V | VGS=0V,ID=250uA |
| Drain-source leakage current | IDSS | 1 | uA | VDS=60V, VGS=0V |
| Gate-source forward leakage | IGSS | 100 | nA | VGS=20V, VDS=0V |
| Drain-source on-resistance | RDS(on) | 7 | m | VGS=10V,ID=60A (typ.) |
| Gate threshold voltage | VGS(TH) | 2.0 - 4.0 | V | VDS=VGS,ID=250uA |
| Forward Transconductance | gfs | 17 | S | VDS=25V,ID=60A (typ.) |
| Input capacitance | Ciss | 2600 | pF | VDS=25V,VGS=0V, f=1MHz (typ.) |
| Output capacitance | Coss | 1000 | pF | VDS=25V,VGS=0V, f=1MHz (typ.) |
| Reverse transfer capacitance | Crss | 480 | pF | VDS=25V,VGS=0V, f=1MHz (typ.) |
| Total gate charge | Qg | 110 | nC | VDS=28V, ID=42A, VGS=15V (typ.) |
| Gate-source charge | Qgs | 11 | nC | VDS=28V, ID=42A, VGS=15V (typ.) |
| Gate-drain charge | Qgd | 50 | nC | VDS=28V, ID=42A, VGS=15V (typ.) |
| Turn-on delay time | td(on) | 50 | ns | VDD=28V,VGS=15V, RG=25, ID=42A (typ.) |
| Rise time | tr | 140 | ns | VDD=28V,VGS=15V, RG=25, ID=42A (typ.) |
| Turn-off delay time | td(off) | 345 | ns | VDD=28V,VGS=15V, RG=25, ID=42A (typ.) |
| Fall time | tf | 210 | ns | VDD=28V,VGS=15V, RG=25, ID=42A (typ.) |
| Continuous Source Current | ISD | 110 | A | TJ=25C |
| Pulsed Source Current | ISM | 440 | A | |
| Diode forward voltage | VSD | 1.2 | V | IS=40A,VGS=0V (typ.) |
| Reverse Recovery Time | trr | 100 | nS | VGS=0V,IF=180A, dIF/dt=100A/s (typ.) |
| Reverse Recovery Charge | Qrr | 0.33 | uC | VGS=0V,IF=180A, dIF/dt=100A/s (typ.) |
2411121110_KIA-Semicon-Tech-KNP3106N_C41369552.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
