85A 30V N Channel MOSFET KIA Semicon Tech KNY3903A Featuring Low On Resistance and Fast Switching
Key Attributes
Model Number:
KNY3903A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
85A
RDS(on):
4mΩ@10V,30A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
240pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.951nF@15V
Pd - Power Dissipation:
90W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
KNY3903A
Package:
DFN-8(5x6)
Product Description
Product Overview
The 85A, 30V N-CHANNEL MOSFET (KNY3903A) from KIA SEMICONDUCTORS features very low on-resistance (RDS(ON)=4.0m typ. @VGS=10V), low Crss, and fast switching capabilities. It is 100% avalanche tested and offers improved dv/dt capability, making it suitable for PWM applications, load switches, and power management.
Product Attributes
- Brand: KIA
- Part Number: KNY3903A
- Package: DFN5*6
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | Rating | Units | Test Conditions |
| Drain-source voltage | VDSS | 30 | V | |
| Continuous drain current | ID | 85 | A | TC=25C* |
| Continuous drain current | ID | 55 | A | TC=100C* |
| Pulsed drain current | IDM | 360 | A | Pulsed 1) |
| Gate-source voltage | VGS | 20 | V | |
| Single pulse avalanche energy | EAS | 90 | mJ | 2) |
| Power dissipation | PD | 90 | W | TC=25C |
| Operating junction and storage temperature range | TJ ,TSTG | -55 to150 | C | |
| Drain-source breakdown voltage | BVDSS | 30 | V | VGS=0V,ID=250uA |
| Drain-source leakage current | IDSS | 1 | uA | VDS=30V, VGS=0V |
| Drain-source leakage current | IDSS | 10 | uA | VDS=24V, TC=125C |
| Gate-source forward leakage | IGSS | 100 | nA | VGS=20V, VDS=0V |
| Gate threshold voltage | VGS(TH) | 1.0 - 2.5 | V | VDS=VGS,ID=250uA |
| Drain-source on-resistance | RDS(on) | 4.0 - 5.5 | m | VGS=10V,ID=30A |
| Drain-source on-resistance | RDS(on) | 6.0 - 7.5 | m | VGS=4.5V,ID=30A |
| Input capacitance | Ciss | 1951 | pF | VDS=15V,VGS=0V f=1MHz |
| Output capacitance | Coss | 322 | pF | VDS=15V,VGS=0V f=1MHz |
| Reverse transfer capacitance | Crss | 240 | pF | VDS=15V,VGS=0V f=1MHz |
| Turn-on delay time | td(on) | 12 | ns | VGS=10V, VDS=15V RL=3, ID=30A 3) |
| Rise time | tr | 35 | ns | VGS=10V, VDS=15V RL=3, ID=30A 3) |
| Turn-off delay time | td(off) | 42 | ns | VGS=10V, VDS=15V RL=3, ID=30A 3) |
| Fall time | tf | 15 | ns | VGS=10V, VDS=15V RL=3, ID=30A 3) |
| Total gate charge | Qg | 40 | nC | VDS=15V, ID=30A VGS=10V 3) |
| Gate-source charge | Qgs | 4 | nC | VDS=15V, ID=30A VGS=10V 3) |
| Gate-drain charge | Qg | 12 | nC | VDS=15V, ID=30A VGS=10V 3) |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 90 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 360 | A | |
| Diode forward voltage | VSD | 1.2 | V | ISD=30A,VGS=0V, TJ=25C |
| Reverse recovery time | Trr | 16 | ns | IF=20A dl/dt=100A/s |
| Reverse recovery charge | Qrr | 5 | nC | IF=20A dlF/dt=100A//s |
2410121238_KIA-Semicon-Tech-KNY3903A_C7465102.pdf
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