High current power MOSFET KIA Semicon Tech KIA50N03AD N channel enhancement mode with low on resistance
Key Attributes
Model Number:
KIA50N03AD
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@4.5V,30A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
145pF
Number:
-
Output Capacitance(Coss):
270pF
Input Capacitance(Ciss):
1.18nF
Pd - Power Dissipation:
200W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
KIA50N03AD
Package:
TO-252-2(DPAK)
Product Description
Product Overview
The KIA50N03 is an N-CHANNEL ENHANCEMENT-MODE MOSFET featuring advanced trench process technology and a high-density cell design for ultra low on-resistance. It offers fully characterized avalanche voltage and current, making it suitable for various applications requiring efficient power switching.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Name: 50N03
- Type: N-CHANNEL ENHANCEMENT-MODE MOSFET
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Part Number | Package | VDSS (V) | RDS(ON) (m) @ VGS/ID | ID (A) | PD (W) @ TA | RJC (C/W) | RJA (C/W) |
| KIA50N03 | TO-251, TO-252, TO-220 | 30 | 6.5 (Max.) @ 10V/30A 9.5 (Max.) @ 4.5V/30A | 50 | 60 @ 25C 23 @ 75C | 1.8 | 50 |
2410121331_KIA-Semicon-Tech-KIA50N03AD_C112249.pdf
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