P Channel MOSFET KUU KSI2305CDS T1 GE3 designed for load switching and power conversion applications
Key Attributes
Model Number:
KSI2305CDS-T1-GE3
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-
RDS(on):
85mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
87pF
Number:
1 P-Channel
Output Capacitance(Coss):
223pF
Input Capacitance(Ciss):
415pF
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
36nC@4.5V
Mfr. Part #:
KSI2305CDS-T1-GE3
Package:
SOT-23
Product Description
Product Overview
This P-Channel MOSFET features a 20V Drain-Source Voltage (VDS) and low on-state resistance (RDS(on)MAX) of 65m at -4.5V and 85m at -2.5V. It offers a continuous drain current (ID) of -4A. Designed with TrenchFET technology, it is ideal for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | -4 | A | |||
| Pulsed Diode Current | IDM | -20 | A | |||
| Continuous Source-Drain Current(Diode Conduction) | IS | -0.72 | A | |||
| Power Dissipation | PD | 1.1 | W | |||
| Thermal Resistance from Junction to Ambient (t5s) | RJA | 150 | /W | |||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.5 | -1 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS =12V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =-20V, VGS =0V | -1 | A | ||
| Drain-source on-state resistance | RDS(on) | VGS =-4.5V, ID = -3.2A | 44 | 65 | m | |
| Drain-source on-state resistance | RDS(on) | VGS =-2.5V, ID =-2A | 58 | 85 | m | |
| Forward transconductance | gfs | VDS =-4.5V, ID =-4A | 4 | S | ||
| Diode forward voltage | VSD | IS=-1.25A,VGS=0V | -0.8 | -1.3 | V | |
| Input capacitance | Ciss | VDS =-10V,VGS =0V, f=1MHz | 415 | pF | ||
| Output capacitance | Coss | VDS =-10V,VGS =0V, f=1MHz | 223 | pF | ||
| Reverse transfer capacitance | Crss | VDS =-10V,VGS =0V, f=1MHz | 87 | pF | ||
| Total gate charge | Qg | VDS =-10V,VGS =-4.5V, ID =-4A | 24 | 36 | nC | |
| Gate-source charge | Qgs | VDS =-10V,VGS =-4.5V, ID =-4A | 18 | nC | ||
| Gate-drain charge | Qg | VDS =-10V,VGS =-4.5V, ID =-4A | 2.7 | nC | ||
| Gate resistance | Rg | f=1MHz | 6.0 | |||
| Turn-on delay time | td(on) | VDD=-10V RL=10, ID -1A, VGEN=-4.5V,Rg=6 | 22 | 35 | ns | |
| Rise time | tr | VDD=-10V RL=10, ID -1A, VGEN=-4.5V,Rg=6 | 35 | 60 | ns | |
| Turn-off delay time | td(off) | VDD=-10V RL=10, ID -1A, VGEN=-4.5V,Rg=6 | 45 | 70 | ns | |
| Fall time | tf | VDD=-10V RL=10, ID -1A, VGEN=-4.5V,Rg=6 | 25 | 40 | ns | |
| Continuous Source-Drain Diode Current | IS | Tc=25 | -1.3 | A | ||
| Pulsed Diode forward Current | ISM | Tc=25 | -20 | A |
2410010403_KUU-KSI2305CDS-T1-GE3_C2891686.pdf
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