power semiconductor KNSCHA KN3M65017D designed for high voltage blocking and low switching losses
Key Attributes
Model Number:
KN3M65017D
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
1.7kV
Current - Continuous Drain(Id):
7A
RDS(on):
650mΩ@20V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.6V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.8pF
Pd - Power Dissipation:
62W
Input Capacitance(Ciss):
194pF
Gate Charge(Qg):
23nC
Mfr. Part #:
KN3M65017D
Package:
TO-247-3
Product Description
Product Overview
The WM1A650 N is a high-performance power semiconductor designed for demanding applications. It offers high blocking voltage with low on-resistance, high-speed switching capabilities with low capacitance, and is easy to parallel and simple to drive. These features contribute to higher system efficiency, reduced cooling requirements, increased system reliability, and the ability to operate at increased system switching frequencies.
Product Attributes
- Brand: WM
- Package: TO-247-3
Technical Specifications
| Part Number | Package | VDSmax (V) | VGSmax (V) | ID (A) | RDS(on) (m) | TJ, TSTG () | V(BR)DSS (V) | VGS(th) (V) | IDSS (A) | IGSS+ (nA) | IGSS- (nA) | gfs (S) | Ciss (pF) | Coss (pF) | Crss (pF) | Eoss (J) | EON (mJ) | EOFF (mJ) | td(on) (ns) | tr (ns) | td(off) (ns) | tf (ns) | RG(int) () | QGS (nC) | QGD (nC) | QG (nC) | VSD (V) | IS (A) | trr (ns) | Qrr (nC) | Irrm (A) | RJC (/W) | RJA (/W) |
| WM1A650 | TO-247-3 | 1700 | -10/+25 | 7.0 (Tc=25) / 4.5 (Tc=100) | 650-850 | -55 to +150 | 1700 | 2.0-4.0 (Typ. 2.6) | 1 (Max. 100) | 10 (Max. 250) | 10 (Max. 250) | 1.06-1.14 | 194 | 13 | 1.8 | 6.6 | 5 | 9.2 | 13.8 | 22.8 | 38 | 14 | 18 | 5.4 | 7.6 | 23 | 4.2 (Typ.) / 3.9 (Typ. TJ=150) | 7.0 | 25 | 15 | 2.8 | 1.8 | 40 |
2410121434_KNSCHA-KN3M65017D_C7432998.pdf
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