Electronic Component KTP TIP122 NPN Transistor Featuring Built In Damper Diode and TO220 Plastic Package

Key Attributes
Model Number: TIP122
Product Custom Attributes
Mfr. Part #:
TIP122
Package:
TO-220
Product Description

Product Overview

This NPN transistor offers high DC current gain and is electrically similar to the popular TIP122. It features a built-in damper diode between the collector and emitter, making it suitable for various electronic applications. The transistor is housed in a TO-220 plastic-encapsulate package.

Product Attributes

  • Brand: KTP Semiconductor
  • Model: TIP122
  • Package Type: TO-220 Plastic-Encapsulate
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-Base VoltageVCBO100V
Collector-Emitter VoltageVCEO100V
Emitter-Base VoltageVEBO5V
Collector Current -ContinuousIC2A
Collector DissipationPCTa=25 unless otherwise noted2W
Junction and Storage TemperatureTJ, Tstg-55150
Collector-base breakdown voltageV(BR)CBOIc=1mA,IE=0100V
Collector-emitter breakdown voltageV(BR)CEOIc=30mA,IB=0100V
Emitter-base breakdown voltageV(BR)EBOIE=3mA,IC=05V
Collector cut-off currentICBOVCB=100V,IE=010A
Collector-emitter cut-off currentICEOVCE=50V,IE=010A
Emitter cut-off currentIEBOVEB=5V,IC=02mA
DC current gainhFE(2)VCE=4V,IC=4A100010000
DC current gainhFE(3)VCE=4V,IC=8A100
Collector-emitter saturation voltageVCE(sat)1IC=4A,IB=16mA2V
Collector-emitter saturation voltageVCE(sat)2IC=8A,IB=80mA4V
Base-emitter saturation voltageVBE(sat)IC=8A,IB=80mA4.5V
Base-emitter voltage*VBEVCE=4V,IC=4A2.8V
Collector output capacitanceCobVCB=10V,IE=0,f=0.1MHz200pF

2409300306_KTP-TIP122_C20613883.pdf

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