Halogen Free Lead Free N Channel MOSFET KUU KBA3134K with Enhanced Trench Process and ESD Protection
Key Attributes
Model Number:
KBA3134K
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
250mΩ@4.5V0.65A
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF@16V
Number:
1 N-channel
Input Capacitance(Ciss):
79pF@16V
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
1.24nC@4.5V
Mfr. Part #:
KBA3134K
Package:
DFN1006-3L
Product Description
Product Overview
The KBA3134K is an N-Channel Enhancement Mode MOSFET featuring advanced Trench Process Technology. It offers a low threshold voltage, fast switching speed, and is Halogen-Free & Lead-Free. This MOSFET is ESD protected up to 2KV (HBM) and is ideal for load switching in portable devices and as a voltage-controlled small signal switch.
Product Attributes
- Brand: Yongyutai (implied by website)
- Certifications: Halogen-Free, Lead-Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDS | 20 | V | (at Ta = 25unless otherwise specified) |
| Gate-Source Voltage | VGS | 12 | V | (at Ta = 25unless otherwise specified) |
| Continuous Drain Current | ID | 0.75 | A | (at Ta = 25unless otherwise specified) |
| Peak Drain Current, Pulsed | IDM | 1.8 | A | 1) Pulse width 100us, duty cycle 1%, limited by Tjmax. |
| Power Dissipation | Ptot | 0.7 | W | 2) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air. |
| Operating Junction Temperature | TJ | -55~150 | ||
| Storage Temperature Range | Tstg | -55~150 | ||
| Thermal Characteristics | ||||
| Thermal Resistance from Junction to Ambient | RJA | 175 | /W | 2) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air. |
| Static Parameters | ||||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | at ID = 250 A, Ta = 25 |
| Drain-Source Leakage Current | IDSS | 1.0 | A | at VDS = 20 V, VGS = 0 V, Ta = 25 |
| Gate Leakage Current | IGSS | 10 | A | at VGS = 10 V, Ta = 25 |
| Gate-Source Threshold Voltage | VGS(th) | 0.35 - 0.7 - 1.1 | V | at VDS = VGS, ID = 250 A, Ta = 25 |
| Drain-Source On-State Resistance | RDS(on) | 250 - 500 | m | at VGS = 4.5 V, ID = 0.65A, Ta = 25 |
| Drain-Source On-State Resistance | RDS(on) | 300 - 700 | m | at VGS = 2.5V, ID = 0.45 A, Ta = 25 |
| Dynamic Parameters | ||||
| Forward Transconductance | gfs | 15 | mS | at VDS = 5 V, ID = 0.15 A, Ta = 25 |
| Input Capacitance | Ciss | 79 | pF | at VGS = 0 V, VDS = 16 V, f = 1 MHz, Ta = 25 |
| Output Capacitance | Coss | 13 | pF | at VGS = 0 V, VDS = 16 V, f = 1 MHz, Ta = 25 |
| Reverse Transfer Capacitance | Crss | 9 | pF | at VGS = 0 V, VDS = 16 V, f = 1 MHz, Ta = 25 |
| Gate Charge Total | Qg | 1.24 | nC | at VDS = 10 V, ID = 0.65 A, VGS = 4.5 V, Ta = 25 |
| Gate to Source Charge | Qgs | 0.37 | nC | at VDS = 10 V, ID = 0.65 A, VGS = 4.5 V, Ta = 25 |
| Gate to Drain Charge | Qgd | 0.27 | nC | at VDS = 10 V, ID = 0.65 A, VGS = 4.5 V, Ta = 25 |
| Turn-On Delay Time | td(on) | 6.7 | ns | at VGS = 4.5 V, VDS = 10 V, ID = 0.5 A, Rg = 10 , Ta = 25 |
| Turn-On Rise Time | tr | 4.8 | ns | at VGS = 4.5 V, VDS = 10 V, ID = 0.5 A, Rg = 10 , Ta = 25 |
| Turn-Off Delay Time | td(off) | 17.3 | ns | at VGS = 4.5 V, VDS = 10 V, ID = 0.5 A, Rg = 10 , Ta = 25 |
| Turn-Off Fall Time | tf | 7.4 | ns | at VGS = 4.5 V, VDS = 10 V, ID = 0.5 A, Rg = 10 , Ta = 25 |
| Body-Diode Parameters | ||||
| Drain-Source Diode Forward Voltage | VSD | 1.2 | V | at IS = 0.15A, VGS = 0 V, Ta = 25 |
| Body Diode Reverse Recovery Time | trr | 14 | ns | at IF = 5.6 A, di/dt = 100 A / s, Ta = 25 |
| Body Diode Reverse Recovery Charge | Qrr | 0.4 | nC | at IF = 5.6A, di/dt = 100 A / s, Ta = 25 |
2410121822_KUU-KBA3134K_C22381407.pdf
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