Low Threshold Voltage N Channel MOSFET KUU 2N7002KM Featuring ESD Protection and Halogen Free Design
Key Attributes
Model Number:
2N7002KM
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
5Ω@10V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
40pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
-
Mfr. Part #:
2N7002KM
Package:
SOT-723
Product Description
Product Overview
This N-Channel Enhancement Mode MOSFET features advanced trench process technology, offering low threshold voltage and fast switching speeds. It is halogen-free, lead-free, and ESD protected up to 2KV (HBM). Ideal for load switching in portable devices and as a voltage-controlled small signal switch.
Product Attributes
- Brand: Yongyutai
- Certifications: Halogen-Free & Lead-Free
- ESD Protection: up to 2KV (HBM)
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Absolute Maximum Ratings | VDS | 60 | V | (at Ta = 25 unless otherwise specified) |
| VGS | 20 | V | ||
| ID | 0.34 | A | ||
| IDM | 1.2 | A | Peak Drain Current, Pulsed | |
| Ptot | 0.15 | W | Power Dissipation | |
| TJ | -55~150 | Operating Junction | ||
| Tstg | -55~150 | Storage Temperature Range | ||
| RJA | 833 | /W | Thermal Resistance from Junction to Ambient (Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.) | |
| VSD | 0.97 - 1.5 | V | Drain-Source Diode Forward Voltage (IS =200mA, VGS = 0 V) | |
| Static Parameters | BVDSS | 60 | V | Drain-Source Breakdown Voltage (at ID = 250 A) |
| IDSS | 1 | A | Drain-Source Leakage Current (at VDS =60 V, VGS=0V) | |
| IGSS | 10 | A | Gate Leakage Current (at VGS = 20 V) | |
| VGS(th) | 1 - 2 | V | Gate-Source Threshold Voltage (at VDS = VGS, ID = 250A) | |
| RDS(on) | 1.6 - 3 | Drain-Source On-State Resistance (at VGS = 10 V, ID = 300mA) | ||
| 2 - 5 | Drain-Source On-State Resistance (at VGS =4.5V, ID = 200mA) | |||
| Qr | 30 | nC | Body Diode Reverse Recovery Charge (VGS=0 V, IS =300m A, VR =25V, di/dt = -100 A / s) | |
| trr | 30 | nS | Body Diode Reverse Recovery Time (VGS = 0 V, IS =300m A, VR =25V, di/dt = -100 A / s) | |
| Dynamic Parameters | Rg | 2 | Gate resistance (at VDS = 0 V, VGS=0V, f = 1 MHz) | |
| gfs | 80 | S | Forward Transconductance (at VDS =10V, ID =200mA) | |
| Ciss | 40 | pF | Input Capacitance (at VDS=10V, VGS=0V, f=1MHz) | |
| Coss | 30 | pF | Output Capacitance (at VDS=10V, VGS=0V, f=1MHz) | |
| Crss | 10 | pF | Reverse Transfer Capacitance (at VDS=10V, VGS=0V, f=1MHz) | |
| Switching Times | td(on) | 10 | nS | Turn-On Delay Time (at VDD=25V, VGS =10V, RL= 250, RGS=50, RGen=25) |
| td(off) | 15 | nS | Turn-Off Delay Time (at VDD=25V, VGS =10V, RL= 250, RGS= 50, RGen=25) |
2411041002_KUU-2N7002KM_C42375085.pdf
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