KUU DMG1012T7 NChannel TrenchFET Power MOSFET in SOT523 Package Suitable for Automotive Applications
Key Attributes
Model Number:
DMG1012T-7
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
500mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
700mΩ@4.5V,600mA
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
150mW
Mfr. Part #:
DMG1012T-7
Package:
SOT-523
Product Description
Product Overview
The DMG1012T-7 is a 150mW N-Channel TrenchFET Power MOSFET in a SOT-523 surface mount package. It features 1.8-V rated operation, gate-source ESD protection up to 2000V, high-side switching capability, low on-resistance (0.7), and a low threshold voltage (0.8V typ.). With fast switching speeds (10ns), it is suitable for low-voltage and battery-operated systems, offering ease in driving switches, low offset voltage, and high-speed circuit operation. The S-prefix designation indicates suitability for automotive and other applications with unique site and control change requirements.
Product Attributes
- Brand: DMG (implied by product code)
- Package: SOT-523
- Lead Finish: Matte Tin(Sn)
- Certifications: RoHS Compliant, Green EMC
- Weight: approx. 0.002g
- Device Marking Code: A
Technical Specifications
| Parameter | Test Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | 20 | V | |||
| Gate-Source Voltage (VGS) | 6 | V | |||
| Continuous Drain Current (ID) | TA=25, Steady State | 600 | mA | ||
| Continuous Drain Current (ID) | TA=85, Steady State | 400 | mA | ||
| Pulsed Drain Current (IDM) | 5 secs | 1000 | mA | ||
| Continuous Source Current (IS) | TA=25 | 275 | mA | ||
| Continuous Source Current (IS) | TA=85 | 250 | mA | ||
| Power Dissipation (PD) | TA=25 | 175 | mW | ||
| Power Dissipation (PD) | TA=85 | 90 | mW | ||
| Storage Temperature Range (TSTG) | -55 | +150 | C | ||
| Operating Junction Temperature (TJ) | +150 | C | |||
| ESD Gate-source ESD Rating (HBM, Method 3015) | 2000 | V | |||
| Electrical Characteristics | |||||
| Gate-Threshold Voltage (Vth(GS)) | VDS=VGS, ID=250uA | 0.45 | 0.9 | Volts | |
| Gate-Body Leakage (IGSS) | VDS=0V, VGS=4.5V | 0.5 | 1.0 | uA | |
| Zero Gate Voltage Drain Current (IDSS) | VDS=20V, VGS=0V | 100 | nA | ||
| On-state Drain Current (ID(ON)) | VDS=5V, VGS=4.5V | 700 | mA | ||
| Drain-Source On-Resistance (RDS(on)) | VGS=4.5V, ID=600mA | 0.41 | 0.70 | ||
| Drain-Source On-Resistance (RDS(on)) | VGS=2.5V, ID=500mA | 0.53 | 0.85 | ||
| Drain-Source On-Resistance (RDS(on)) | VGS=1.8V, ID=350mA | 0.70 | 1.25 | ||
| Forward Trans Conductance (gfs) | VDS=10V, ID=400mA | 1 | S | ||
| Diode Forward Voltage (VSD) | IS=150mA, VGS=0V | 0.8 | 1.2 | V | |
| Dynamic Characteristics | |||||
| Total Gate Charge (Qg) | VDS=10V, VGS=4.5V, ID=250mA | 750 | pC | ||
| Gate-Source Charge (Qgs) | 75 | ||||
| Gate-Drain Charge (Qgd) | 225 | ||||
| Turn-On Delay Time (td(on)) | VDD=10V, RL=47, ID=200mA, VGEN=4.5V RG=10 | 5 | ns | ||
| Rise Time (tr) | 5 | ||||
| Turn-Off Delay Time (td(off)) | 25 | ||||
| Fall Time (tf) | 11 | ||||
2511110935_KUU-DMG1012T-7_C7473321.pdf
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