Versatile Silicon Schottky Diode KUU 1N60PW Suitable for Radios TVs and Similar Electronic Devices
Key Attributes
Model Number:
1N60PW
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
500mA
Reverse Leakage Current (Ir):
50uA@10V
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
45V
Voltage - Forward(Vf@If):
-
Current - Rectified:
50mA
Mfr. Part #:
1N60PW
Package:
SOD-123
Product Description
Product Overview
The 1N60PW is a Silicon Schottky Barrier Diode featuring metal silicon junction and majority carrier conduction. It is ideal for detection or switching applications in radios, TVs, and similar electronic devices.
Product Attributes
- Brand: 1N60PW
- Material: Silicon
Technical Specifications
| Parameter | Symbol | Unit | Value |
|---|---|---|---|
| Peak Reverse Voltage | VRM | V | 45 |
| Average Rectified Output Current | IO | mA | 50 |
| Total Capacitance at f=1MHz, VR=1V | Ctot | pF | 50 |
| Reverse Current at VR=10V | uA | 125 | |
| Rectification efficiency at Vi = 2 VRMS, RL = 5 K | % | 55 | |
| Junction Temperature | Tj | C | 150 |
| Forward Current at VF1V | IF | mA | 4 |
| Reverse Voltage | VR | V | 20 |
| Peak Forward Current | IFM | mA | 150 |
| Surge Forward Current | Isurge | mA | 500 |
| Storage Temperature Range | Tstg | C | -55 ~ +150 |
Mechanical Data
Case: SOD-123
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 16mg/0.00056oz
Marking Code: L60
Simplified outline SOD-123 and symbol
Dimensions (mm/mil):
- A: 1.3 / 51 (max)
- A1: 0.22 / 8.7 (max)
- b: 0.9 / 35 (max)
- C: 0.09 / 3.5 (max)
- D: 1.8 / 71 (max)
- E: 2.8 / 110 (max)
- E1: 1.5 / 59 (max)
- L1: 3.9 / 154 (max)
- ALL ROUND: 0.7 / 28 (max)
- : 9
Recommended mounting pad size (mm/mil):
- 1.2 (47) x 1.2 (47)
- 2.0 (79) x 1.2 (47)
2410122011_KUU-1N60PW_C7424666.pdf
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