P Channel MOSFET Leiditech IRLML9303 Featuring Trench Technology and Low RDS ON Resistance for Power

Key Attributes
Model Number: IRLML9303
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
RDS(on):
90mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF@15V
Input Capacitance(Ciss):
640pF@15V
Pd - Power Dissipation:
2.1W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
IRLML9303
Package:
SOT-23
Product Description

Product Overview

The IRLML9303 is a P-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and is designed for operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is manufactured by Shanghai Leiditech Electronic Co.,Ltd.

Product Attributes

  • Brand: Leiditech
  • Origin: China
  • Package Type: SOT23
  • Technology: Trench Technology
  • Channel Type: P-Channel
  • Mode: Enhancement Mode

Technical Specifications

Parameter Symbol Condition Min Typ Max Unit
General Description
Drain-Source Voltage VDS -30 V
ID (at VGS=-10V) ID VGS=-10V -5.0 A
RDS(ON) (at VGS=-10V) RDS(ON) VGS=-10V 50 m
RDS(ON) (at VGS=-4.5V) RDS(ON) VGS=-4.5V 65 m
RDS(ON) (at VGS=-2.5V) RDS(ON) VGS=-2.5V 90 m
Absolute Maximum Ratings (TA=25C unless otherwise noted)
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS 12 V
Drain Current-Continuous ID TC=25C -5.0 A
Drain Current-Continuous ID TC=100C -3.5 A
Drain Current Pulsed IDM -20 A
Maximum Power Dissipation PD 2.1 W
Junction and Storage Temperature Range TJ,TSTG -55 To 150
Thermal Characteristics
Thermal Resistance junction-case RJc 1.1 /W
Thermal Resistance unction-to-Ambient RJA 60 /W
Electrical Characteristics (TJ=25 unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250A -30 V
Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V 1 A
Gate-Body Leakage Current IGSS VGS=12V, VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250A -0.5 -0.9 -1.5 V
Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-4.0A 41 50 m
Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-3.5A 50 65 m
Drain-Source On-State Resistance RDS(ON) VGS=-2.5V, ID=-2.0A 60 90 m
Dynamic Parameters
Input Capacitance Clss VDS=-15V, VGS=0V, F=1.0MHz 640 pF
Output Capacitance Coss VDS=-15V, VGS=0V, F=1.0MHz 80 pF
Reverse Transfer Capacitance Crss VDS=-15V, VGS=0V, F=1.0MHz 55 pF
Switching Parameters
Turn-on Delay Time td(on) VDS=-15V, ID=-1A, VGS=-10V, RG=3 6.5 nS
Turn-on Rise Time tr VDS=-15V, ID=-1A, VGS=-10V, RG=3 3.5 nS
Turn-Off Delay Time td(off) VDS=-15V, ID=-1A, VGS=-10V, RG=3 41 nS
Turn-Off Fall Time tf VDS=-15V, ID=-1A, VGS=-10V, RG=3 9 nS
Total Gate Charge Qg VDS=-15V, ID=-4.0A, VGS=-10V 14 nC
Gate-Source Charge Qgs VDS=-15V, ID=-4.0A, VGS=-10V 1.5 nC
Gate-Drain Charge Qgd VDS=-15V, ID=-4.0A, VGS=-10V 1.6 nC
Diode Forward Voltage VSD VGS=0V, ISD=-1A 0.72 1.4 V
Gate resistance Rg VGS=0V, VDS=0V, F=1MHz 7
SOT23 Package Information
Dimension Symbol Min Max Min Max Unit
A 0.900 1.150 0.035 0.045 mm/Inches
A1 0.000 0.100 0.000 0.004 mm/Inches
A2 0.900 1.050 0.035 0.041 mm/Inches
b 0.300 0.500 0.012 0.020 mm/Inches
c 0.080 0.150 0.003 0.006 mm/Inches
D 2.800 3.000 0.110 0.118 mm/Inches
E 1.200 1.400 0.047 0.055 mm/Inches
E1 2.250 2.550 0.089 0.100 mm/Inches
e 0.95 TYP. 0.037 TYP. mm/Inches
e1 1.800 2.000 0.071 0.079 mm/Inches
L 0.55 REF. 0.022 REF. mm/Inches
L1 0.300 0.500 0.012 0.020 mm/Inches
L2 0.25 TYP. 0.01 TYP. mm/Inches
0 8 0 8 Degrees

2410010404_Leiditech-IRLML9303_C3040111.pdf
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