TrenchFET Technology MOSFET KUU KAO3400 N Channel with Low On Resistance and High Current Capability
Key Attributes
Model Number:
KAO3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-
RDS(on):
80mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
630pF@15V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
12nC@0V
Mfr. Part #:
KAO3400
Package:
SOT-23
Product Description
Product Overview
N-Channel 30-V(D-S) MOSFET featuring TrenchFET technology for exceptional on-resistance and maximum DC current capability. Designed with a high-dense cell structure for extremely low RDS(ON), this MOSFET is ideal for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: KAO
- Model: KAO3400
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | 5.8 | A | |||
| Pulsed Diode Current | IDM | 30 | A | |||
| Continuous Source-Drain Current(Diode Conduction) | IS | 0.72 | A | |||
| Power Dissipation | PD | 0.35 | W | |||
| Thermal Resistance from Junction to Ambient (t5s) | RJA | 357 | /W | |||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID = 250A | 30 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID = 250A | 0.6 | 1.2 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS = 12V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS = 30V, VGS =0V | 1 | A | ||
| Drain-source on-state resistance | RDS(on) | VGS = 10V, ID = 3.8A | 24 | 40 | m | |
| Drain-source on-state resistance | RDS(on) | VGS = 4.5V, ID = 2.8A | 27 | 60 | m | |
| Drain-source on-state resistance | RDS(on) | VGS = 2.5V, ID = 2A | 37 | 80 | m | |
| Forward transconductance | gfs | VDS = 4.5V, ID = 5.8A | 33 | S | ||
| Diode forward voltage | VSD | IS=1A,VGS=0V | 0.7 | 1.3 | V | |
| Input capacitance | Ciss | VDS = 15V,VGS =0V, f=1MHz | 630 | pF | ||
| Output capacitance | Coss | VDS = 15V,VGS =0V, f=1MHz | 75 | pF | ||
| Reverse transfer capacitance | Crss | VDS = 15V,VGS =0V, f=1MHz | 50 | pF | ||
| Total gate charge | Qg | VDS = 15V,VGS = 4.5V, ID =5.8A | 6 | 12 | nC | |
| Gate-source charge | Qgs | VDS = 15V,VGS = 4.5V, ID =5.8A | 1.3 | nC | ||
| Gate-drain charge | Qg | VDS = 15V,VGS = 4.5V, ID =5.8A | 1.8 | nC | ||
| Gate resistance | Rg | f=1MHz | 4.5 | |||
| Turn-on delay time | td(on) | VDD= 15V RL=8, ID 1A, VGEN= 4.5V,Rg=6 | 4 | ns | ||
| Rise time | tr | VDD= 15V RL=8, ID 1A, VGEN= 4.5V,Rg=6 | 3 | ns | ||
| Turn-off delay time | td(off) | VDD= 15V RL=8, ID 1A, VGEN= 4.5V,Rg=6 | 25 | ns | ||
| Fall time | tf | VDD= 15V RL=8, ID 1A, VGEN= 4.5V,Rg=6 | 4 | ns | ||
| Continuous Source-Drain Diode Current | IS | Tc=25 | 2 | A | ||
| Pulsed Diode forward Current | ISM | Tc=25 | 20 | A |
2410121738_KUU-KAO3400_C2891617.pdf
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