86--136 6733 2386
quality N-Channel Enhancement Mode Power MOSFET Leiditech NVTYS010N06CL Featuring DFN3x3-8L Package and 20A Drain Current factory
quality N-Channel Enhancement Mode Power MOSFET Leiditech NVTYS010N06CL Featuring DFN3x3-8L Package and 20A Drain Current factory

N-Channel Enhancement Mode Power MOSFET Leiditech NVTYS010N06CL Featuring DFN3x3-8L Package and 20A Drain Current

Key Attributes
Model Number: NVTYS010N06CL
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
RDS(on):
13mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
4.1pF
Number:
1 N-channel
Output Capacitance(Coss):
199.5pF
Input Capacitance(Ciss):
1.1821nF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
18.4nC@10V
Mfr. Part #:
NVTYS010N06CL
Package:
DFN3x3-8L
Product Description

Product Overview

The NVTYS010N06CL is an N-Channel, Enhancement Mode Power MOSFET designed for various applications. It features a DFN3*3-8L package and offers robust performance with a continuous drain current of up to 20 A at 25C and 60 A pulsed drain current. This MOSFET is suitable for applications requiring efficient power handling and switching capabilities.

Product Attributes

  • Brand: Leiditech
  • Model: NVTYS010N06CL
  • Package Type: DFN3*3-8L
  • Channel Type: N-Channel
  • Mode: Enhancement Mode
  • Origin: Shanghai Leiditech Electronic Co.,Ltd

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain source voltage @Tj=25 60 V
VGS Gate source voltage 20 V
ID@TA=25 Continuous drain current 20 A
ID@TA=70 Continuous drain current 11 A
IDM Pulsed drain current 60 A
PD@TA=25 Power dissipation 60 W
EAS Single pulsed avalanche energy 30 mJ
TSTG Storage Temperature Range -55 150
Tj Operation and storage temperature -55 150
RJC Thermal resistance, junction-case 2.1 C/W
RJA Thermal resistance, junction-ambient5) 85 C/W
Electrical Characteristics
BVDSS Drain-source breakdown voltage VGS=0 V, ID=250 A 60 68 V
VGS(th) Gate threshold voltage VDS=VGS, ID=250 A 1.2 1.5 2.5 V
RDS(ON) Drain-source on-state resistance VGS=10 V, ID=20 A 7.5 10 m
RDS(ON) Drain-source on-state resistance VGS=4.5 V, ID=10 A 10 13 m
IGSS Gate-source leakage current VGS=20 V 100 nA
IDSS Drain-source leakage current VDS=60 V, VGS=0 V 1 A
Ciss Input capacitance VGS=0 V, VDS=50 V, =100 kHz 1182.1 pF
Coss Output capacitance 199.5 pF
Crss Reverse transfer capacitance 4.1 pF
td(on) Turn-on delay time VGS=10 V, VDS=50 V, RG=2 , ID=10 A 17.9 ns
tr Rise time 4.0 ns
td(off) Turn-off delay time 34.9 ns
tf Fall time 5.5 ns
Qg Total gate charge ID=10 A, VDS=50 V, VGS=10 V 18.4 nC
Qgs Gate-source charge 3.3 nC
Qgd Gate-drain charge 3.1 nC
Vplateau Gate plateau voltage 2.8 V
IS Diode forward current VGS<Vth 60 A
ISP Pulsed source current 180 A
VSD Diode forward voltage IS=20 A, VGS=0 V 1.3 V
trr Reverse recovery time IS=10 A, di/dt=100 A/s 41.8 ns
Qrr Reverse recovery charge 36.1 nC
Irrm Peak reverse recovery current 1.4 A
Package Mechanical Data - DFN3*3-8L
Symbol Common mm Nom
A 0.70 0.75 0.85 0.75
A1 / / 0.05 0.05
b 0.20 0.30 0.40 0.30
c 0.10 0.152 0.25 0.152
D 3.15 3.30 3.45 3.30
D1 3.00 3.15 3.25 3.15
D2 2.29 2.45 2.65 2.45
E 3.15 3.30 3.45 3.30
E1 2.90 3.05 3.20 3.05
E2 1.54 1.74 1.94 1.74
E3 0.28 0.48 0.65 0.48
E4 0.37 0.57 0.77 0.57
E5 0.10 0.20 0.30 0.20
e 0.60 0.65 0.70 0.65
K 0.59 0.69 0.89 0.69
L 0.30 0.40 0.50 0.40
L1 0.06 0.125 0.20 0.125
t 0 0.075 0.13 0.075
10 12 14 12

2410121607_Leiditech-NVTYS010N06CL_C3647076.pdf

Related Products
quality High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics factory
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
quality digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free factory
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
quality N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities factory
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
quality YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies factory
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.