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quality electronic component Leiditech DMN601WKQ with 1000V ESD protection and RoHS Halogen Free standards factory
quality electronic component Leiditech DMN601WKQ with 1000V ESD protection and RoHS Halogen Free standards factory

electronic component Leiditech DMN601WKQ with 1000V ESD protection and RoHS Halogen Free standards

Key Attributes
Model Number: DMN601WKQ
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
50pF@25V
Pd - Power Dissipation:
225mW
Mfr. Part #:
DMN601WKQ
Package:
SOT-323-3
Product Description

Product Overview

The DMN601WKQ is a semiconductor device designed for various electronic applications. It offers ESD protection up to 1000V and complies with RoHS requirements and Halogen Free standards. This device is suitable for applications requiring reliable performance and robust protection.

Product Attributes

  • Brand: Leiditech
  • Compliance: RoHS, Halogen Free
  • Protection: ESD Protected (1000V)
  • Packaging: 3000/Tape&Reel (SC70/SOT-323)

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Conditions
DrainSource Breakdown Voltage VBRDSS 60 - - Vdc VGS = 0, ID = 10Adc
DrainSource Voltage VDSS - - 60 Vdc -
DrainGate Voltage VDGR - - 60 Vdc RGS = 1.0 M
GateSource Voltage VGS - - 20 Vdc -
GateSource Voltage (Non-repetitive) VGSM - - 40 Vdc tp50s
Drain Current ID - - 225 mAdc TC = 25C
Zero Gate Voltage Drain Current IDSS - - 1.0 Adc TJ = 25C (VGS = 0, VDS = 60 Vdc)
Zero Gate Voltage Drain Current IDSS - - 50 Adc TJ = 125C (VGS = 0, VDS = 60 Vdc)
GateBody Leakage Current, Forward IGSSF - - 1.0 Adc VGS = 20 Vdc
GateBody Leakage Current, Reverse IGSSR - - -1.0 Adc VGS = -20 Vdc
Gate Threshold Voltage VGS(th) - 1.0 - Vdc VDS = VGS, ID = 250Adc
OnState Drain Current ID(on) - - 500 mAdc VDS 2.0 VDS(on), VGS = 10 Vdc
Static DrainSource OnState Voltage VDS(on) - - 1.4 Vdc VGS = 10 Vdc, ID = 500 mAdc
Static DrainSource OnState Voltage VDS(on) - - 7.5 Vdc VGS = 5.0 Vdc, ID = 50 mAdc
Static DrainSource OnState Resistance RDS(on) - 13.5 - Ohms VGS = 10 Vdc, ID = 500 mAdc, TC = 25C
Static DrainSource OnState Resistance RDS(on) - 13.5 - Ohms VGS = 10 Vdc, ID = 500 mAdc, TC = 125C
Static DrainSource OnState Resistance RDS(on) - 7.5 - Ohms VGS = 5.0 Vdc, ID = 50 mAdc, TC = 25C
Static DrainSource OnState Resistance RDS(on) - 7.5 - Ohms VGS = 5.0 Vdc, ID = 50 mAdc, TC = 125C
Forward Transconductance gfs - 80 - mmhos VDS 2.0 VDS(on), ID = 200 mAdc
Input Capacitance Ciss - 17 - pF VDS = 25 Vdc, VGS = 0, f = 1.0 MHz
Output Capacitance Coss - 10 - pF VDS = 25 Vdc, VGS = 0, f = 1.0 MHz
Reverse Transfer Capacitance Crss - 2.5 - pF VDS = 25 Vdc, VGS = 0, f = 1.0 MHz
TurnOn Delay Time td(on) - 7 - ns VDD = 25 Vdc , ID =500 mAdc, RG = 25,RL = 50 ,Vgen = 10 V
TurnOff Delay Time td(off) - 20 - ns VDD = 25 Vdc , ID =500 mAdc, RG = 25,RL = 50 ,Vgen = 10 V
Diode Forward OnVoltage VSD - - 1.5 Vdc IS = 115 mAdc, VGS = 0 V
Source Current Continuous (Body Diode) IS - - 115 mAdc -
Source Current Pulsed (Body Diode) ISM - - 800 mAdc Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
Total Device Dissipation PD - 225 - mW FR5 Board (Note 2) @ TA = 25C
Derate above 25C - - 1.8 - mW/C -
Thermal Resistance, JunctiontoAmbient RJA - 556 - C/W FR5 Board (Note 2)
Junction and Storage temperature TJ,Tstg -55 - 150 C -

Note 1: Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
Note 2: FR5 = 1.00.750.062 in.


2410121549_Leiditech-DMN601WKQ_C4555457.pdf

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