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quality P Channel Enhancement Mode Power MOSFET Leiditech DMG3130LQ for Load Switch and PWM Application Needs factory
quality P Channel Enhancement Mode Power MOSFET Leiditech DMG3130LQ for Load Switch and PWM Application Needs factory

P Channel Enhancement Mode Power MOSFET Leiditech DMG3130LQ for Load Switch and PWM Application Needs

Key Attributes
Model Number: DMG3130LQ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
RDS(on):
90mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
55pF@15V
Input Capacitance(Ciss):
640pF@15V
Pd - Power Dissipation:
2.1W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
DMG3130LQ
Package:
SOT-23
Product Description

Product Overview

The DMG3130LQ is a P-Channel enhancement mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and is capable of operating with gate voltages as low as 2.5V. This device is well-suited for use as a load switch or in Pulse Width Modulation (PWM) applications. Key features include a Drain-Source Voltage (VDS) of -30V and a continuous Drain Current (ID) of -5.0A at 25C case temperature.

Product Attributes

  • Brand: Leiditech
  • Model: DMG3130LQ
  • Technology: Advanced Trench Technology
  • Package Type: SOT23
  • Channel Type: P-Channel
  • Mode: Enhancement Mode
  • Origin: Shanghai Leiditech Electronic Co.,Ltd

Technical Specifications

Parameter Symbol Condition Min Typ Max Units
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250A -30 V
Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V 1 A
Gate-Body Leakage Current IGSS VGS=12V, VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250A -0.5 -0.9 -1.5 V
Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-4.0A 41 50 m
Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-3.5A 50 65 m
Drain-Source On-State Resistance RDS(ON) VGS=-2.5V, ID=-2.0A 60 90 m
Input Capacitance Clss VDS=-15V, VGS=0V, F=1.0MHz 640 pF
Output Capacitance Coss VDS=-15V, VGS=0V, F=1.0MHz 80 pF
Reverse Transfer Capacitance Crss VDS=-15V, VGS=0V, F=1.0MHz 55 pF
Turn-on Delay Time td(on) VDS=-15V, ID=-1A, VGS=-10V, RG=3 6.5 nS
Turn-on Rise Time tr VDS=-15V, ID=-1A, VGS=-10V, RG=3 3.5 nS
Turn-Off Delay Time td(off) VDS=-15V, ID=-1A, VGS=-10V, RG=3 41 nS
Turn-Off Fall Time tf VDS=-15V, ID=-1A, VGS=-10V, RG=3 9 nS
Total Gate Charge Qg VDS=-15V, ID=-4.0A, VGS=-10V 14 nC
Gate-Source Charge Qgs VDS=-15V, ID=-4.0A, VGS=-10V 1.5 nC
Gate-Drain Charge Qgd VDS=-15V, ID=-4.0A, VGS=-10V 1.6 nC
Diode Forward Voltage VSD VGS=0V, ISD=-1A 0.72 1.4 V
Gate resistance Rg VGS=0V, VDS=0V, F=1MHz 7
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS 12 V
Drain Current-Continuous ID TC=25C -5.0 A
Drain Current-Continuous ID TC=100C -3.5 A
Drain Current Pulsed IDM -20 A
Maximum Power Dissipation PD 2.1 W
Junction and Storage Temperature Range TJ,TSTG -55 To 150
Thermal Resistance junction-case RJc 1.1 /W
Thermal Resistance junction-to-Ambient RJA 60 /W
Package Dimensions (A) 0.900 1.150 mm
Package Dimensions (A1) 0.000 0.100 mm
Package Dimensions (A2) 0.900 1.050 mm
Package Dimensions (b) 0.300 0.500 mm
Package Dimensions (c) 0.080 0.150 mm
Package Dimensions (D) 2.800 3.000 mm
Package Dimensions (E) 1.200 1.400 mm
Package Dimensions (E1) 2.250 2.550 mm
Package Dimensions (e) 0.950 TYP. mm
Package Dimensions (e1) 1.800 2.000 mm
Package Dimensions (L) 0.550 REF. mm
Package Dimensions (L1) 0.300 0.500 mm
Package Dimensions (L2) 0.250 TYP. mm
Package Dimensions () 0 8

2410010404_Leiditech-DMG3130LQ_C3040113.pdf

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