Plastic Encapsulated SOT23 Transistors Featuring KUU SI2301 3A for Power Management and Circuit Control

Key Attributes
Model Number: SI2301 3A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
110mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 P-Channel
Output Capacitance(Coss):
75pF
Input Capacitance(Ciss):
405pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
12nC@2.5V
Mfr. Part #:
SI2301 3A
Package:
SOT-23
Product Description

SOT-23 Plastic-Encapsulated Transistors

This product features TrenchFET Power MOSFET technology, designed for efficient power management applications. Its robust design and high performance characteristics make it suitable for various electronic circuits requiring reliable switching and amplification.

Product Attributes

  • Brand: Not Specified
  • Origin: Not Specified
  • Material: Plastic-Encapsulated
  • Color: Not Specified
  • Certifications: Not Specified

Technical Specifications

ParameterSymbolTest ConditionsMINTYPMAXUnits
Maximum RatingsVDS-20V
VGS±12V
ID-3A
PDTA=251W
Tj150
Tstg-55150
V(BR)DSSVGS=0V,ID=-250uA-20V
Electrical CharacteristicsVth(GS)VDS=VGS, ID=-250uA-0.4-0.7-1V
IGSSVDS=0V, VGS=±12V±100nA
IDSSVDS=-20V, VGS=0V-1uA
rDS(ON)VGS=-4.5V, ID=-3A64110
rDS(ON)VGS=-2.5V, ID=-2A89140
gfsVDS=-5V, ID=-2.8A9.5S
Dynamic CharacteristicsCissVDS=-10V, VGS=0V, f=1MHz405pF
Coss75pF
Crss55pF
td(on)VDD=-10V, ID=-1A, VGS=-4.5V, RGEN=10Ω11nS
tr35nS
td(off)30nS
tf10nS
Switching CapacitanceQg3.312nC
Qgs0.7nC
QgdVDS=-10V, ID=-3A, VGS=-2.5V1.3nC
Drain-Source Diode CharacteristicsVSDVGS=0V, ID=-1.3A-1.2V
Is-1.3A

2410121447_KUU-SI2301-3A_C2944155.pdf

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