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quality General purpose MOSFET transistor Leiditech 2N7002W with 1000V ESD protection and RoHS certification factory
quality General purpose MOSFET transistor Leiditech 2N7002W with 1000V ESD protection and RoHS certification factory

General purpose MOSFET transistor Leiditech 2N7002W with 1000V ESD protection and RoHS certification

Key Attributes
Model Number: 2N7002W
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
RDS(on):
1.4Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
5pF@25V
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
50pF@25V
Pd - Power Dissipation:
225mW
Mfr. Part #:
2N7002W
Package:
SC-70(SOT-323)
Product Description

Product Overview

The 2N7002W is a MOSFET transistor designed for general-purpose applications. It offers ESD protection up to 1000V and complies with RoHS requirements and Halogen Free standards. This device is suitable for various switching and amplification tasks in electronic circuits.

Product Attributes

  • Brand: Leiditech
  • Model: 2N7002W
  • Marking: 2C
  • Certifications: RoHS compliant, Halogen Free
  • ESD Protected: 1000V

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Conditions
DrainSource Breakdown Voltage VBRDSS 60 - - Vdc VGS = 0, ID = 10Adc
Zero Gate Voltage Drain Current IDSS - - 1.0 Adc VGS = 0, VDS = 60 Vdc, TJ = 25C
Zero Gate Voltage Drain Current IDSS - - 50 Adc VGS = 0, VDS = 60 Vdc, TJ = 125C
GateBody Leakage Current, Forward IGSSF - - 1.0 Adc VGS = 20 Vdc
GateBody Leakage Current, Reverse IGSSR - - -1.0 Adc VGS = - 20 Vdc
Gate Threshold Voltage VGS(th) - - 2.5 Vdc VDS = VGS, ID = 250Adc
OnState Drain Current ID(on) - 500 - mAdc VDS 2.0 VDS(on), VGS = 10 Vdc
Static DrainSource OnState Voltage VDS(on) - - 1.0 Vdc VGS = 10 Vdc, ID = 500 mAdc
Static DrainSource OnState Voltage VDS(on) - - 1.8 Vdc VGS = 5.0 Vdc, ID = 50 mAdc
Static DrainSource OnState Resistance RDS(on) - - 13.5 Ohms VGS = 10 Vdc, ID = 500 mAdc, TC = 25C
Static DrainSource OnState Resistance RDS(on) - - 7.5 Ohms VGS = 10 Vdc, ID = 500 mAdc, TC = 125C
Static DrainSource OnState Resistance RDS(on) - - 13.5 Ohms VGS = 5.0 Vdc, ID = 50 mAdc, TC = 25C
Static DrainSource OnState Resistance RDS(on) - - 3.75 Ohms VGS = 5.0 Vdc, ID = 50 mAdc, TC = 125C
Forward Transconductance gfs - 500 - mmhos VDS 2.0 VDS(on), ID = 200 mAdc
Input Capacitance Ciss - 17 - pF VDS = 25 Vdc, VGS = 0, f = 1.0 MHz
Output Capacitance Cobo - 10 - pF VDS = 25 Vdc, VGS = 0, f = 1.0 MHz
Reverse Transfer Capacitance Crss - 2.5 - pF VDS = 25 Vdc, VGS = 0, f = 1.0 MHz
Diode Forward OnVoltage VSD - - 1.5 Vdc IS = 115 mAdc, VGS = 0 V
Source Current Continuous (Body Diode) IS - - 115 mAdc
Source Current Pulsed (Body Diode) ISM - - 800 mAdc Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
TurnOn Delay Time td(on) - 7 - ns VDD = 25 Vdc , ID =500 mAdc, RG = 25,RL = 50 ,Vgen = 10 V
TurnOff Delay Time td(off) - 20 - ns VDD = 25 Vdc , ID =500 mAdc, RG = 25,RL = 50 ,Vgen = 10 V
Total Device Dissipation PD - 225 - mW FR-5 Board (Note 2) @ TA = 25C
Derate above 25C - - 1.8 - mW/C
Thermal Resistance, JunctiontoAmbient RJA - 556 - C/W FR-5 Board (Note 2)
Junction and Storage temperature TJ,Tstg -55 - 150 C
GateSource Voltage Continuous VGS - - 20 Vdc
GateSource Voltage Pulsed (Note 1) VGSM - - 40 Vdc
DrainGate Voltage Continuous VDGR - - 60 Vdc RGS = 1.0 M
DrainSource Voltage VDSS - - 60 Vdc
Drain Current ID - - 225 mAdc TC = 25C
Drain Current ID - - 115 mAdc TC = 100C
Drain Current - Pulsed IDM - - 60 mAdc (Note 1)
Device Marking Shipping
2N7002W 2C 3000/Tape&Reel

Notes:

  • 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
  • 2. FR5 = 1.00.750.062 in.
  • 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

2207111030_Leiditech-2N7002W_C4555453.pdf

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