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quality N Channel 30V MOSFET Leiditech DMN3028LQ Designed for Lithium Battery Protection and Fast Charging factory
quality N Channel 30V MOSFET Leiditech DMN3028LQ Designed for Lithium Battery Protection and Fast Charging factory

N Channel 30V MOSFET Leiditech DMN3028LQ Designed for Lithium Battery Protection and Fast Charging

Key Attributes
Model Number: DMN3028LQ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
RDS(on):
38mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
33pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
233pF@15V
Pd - Power Dissipation:
1W
Mfr. Part #:
DMN3028LQ
Package:
SOT-23
Product Description

Product Overview

The DMN3028LQ is a 30V N-Channel Enhancement Mode MOSFET featuring advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 4.5V. This device is well-suited for applications such as battery protection and other switching applications, including lithium battery protection, wireless impact, and mobile phone fast charging.

Product Attributes

  • Brand: Leiditech
  • Model: DMN3028LQ
  • Package Type: SOT-23

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage 20 V
ID@TA=25 Continuous Drain Current 4.2 A
ID@TA=70 Continuous Drain Current 2.6 A
IDM Pulsed Drain Current 16 A
PD Power Dissipation TA = 25 1 W
RJA Thermal Resistance, Junction to Ambient 125 /W
TJ, TSTG Operating and Storage Temperature Range -55 +150
V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250A 30 32 - V
IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V - - 1.0 A
IGSS Gate to Body Leakage Current VDS=0V, VGS= 20V - - 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250A 1.2 1.5 2.5 V
RDS(on) Static Drain-Source on-Resistance VGS=10V, ID=4A - 29 38 m
VGS=4.5V, ID=3A - 45 65 m
Ciss Input Capacitance VDS=15V, VGS=0V, f=1.0MHz - 233 - pF
Coss Output Capacitance - 44 - pF
Crss Reverse Transfer Capacitance - 33 - pF
Qg Total Gate Charge VDS=15V, ID=2A, VGS=10V - 3 - nC
Qgs Gate-Source Charge - 0.5 - nC
Qgd Gate-Drain(Miller) Charge - 0.8 - nC
td(on) Turn-on Delay Time VDS=15V, ID=4A, RGEN=3, VGS=10V - 4 - ns
tr Turn-on Rise Time - 2.1 - ns
td(off) Turn-off Delay Time - 15 - ns
tf Turn-off Fall Time - 3.2 - ns
IS Maximum Continuous Drain to Source Diode Forward Current - - 4 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 16 A
VSD Drain to Source Diode Forward Voltage VGS=0V, IS=4A - - 1.2 V
Symbol Dimensions in Millimeters MIN. MAX.
A 0.900 1.150
A1 0.000 0.100
A2 0.900 1.050
b 0.300 0.500
c 0.080 0.150
D 2.800 3.000
E 1.200 1.400
E1 2.250 2.550
e 0.950TYP
e1 1.800 2.000
L 0.550REF
L1 0.300 0.500
0 8

Package Marking and Ordering Information:

  • Device Marking: DMN3028LQ
  • Device Package: SOT-23
  • Reel Size: 180mm
  • Tape width: 8 mm
  • Quantity: 3000 units

2410121536_Leiditech-DMN3028LQ_C3647051.pdf

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