Switching Applications and Battery Protection Using Leiditech DMG2305UXQ 20V P Channel MOSFET Device
Key Attributes
Model Number:
DMG2305UXQ
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.9A
RDS(on):
88mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
160pF
Number:
1 P-Channel
Pd - Power Dissipation:
1.31W
Input Capacitance(Ciss):
1.2nF@15V
Gate Charge(Qg):
14.3nC@4.5V
Mfr. Part #:
DMG2305UXQ
Package:
SOT-23
Product Description
Product Overview
The DMG2305UXQ is a 20V P-Channel Enhancement Mode MOSFET designed with advanced trench technology. It offers excellent RDS(ON), low gate charge, and the ability to operate with gate voltages as low as 4.5V. This device is highly suitable for battery protection and other switching applications, including load switching and uninterruptible power supplies.
Product Attributes
- Brand: Leiditech
- Model: DMG2305UXQ
- Package Type: SOT-23
- Device Marking: A5SHB
- Reel Size: 180mm
- Tape Width: 8 mm
- Quantity per Reel: 3000 units
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | 12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -4.5V | -4.9 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -4.5V | -3.9 | A | |||
| IDM | Pulsed Drain Current | -14 | A | |||
| PD@TA=25 | Total Power Dissipation | 1.31 | W | |||
| PD@TA=70 | Total Power Dissipation | 0.84 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient | 120 | /W | |||
| RJA | Thermal Resistance Junction-Ambient (t 10s) | 95 | /W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.014 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-4.5V , ID=-4.9A | 32 | 38 | m | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-2.5V , ID=-3.4A | 45 | 55 | m | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-1.8V , ID=-2A | 65 | 85 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.4 | -1.0 | V | |
| VGS(th) | VGS(th) Temperature Coefficient | 3.95 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-16V , VGS=0V , TJ=25 | -1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=-16V , VGS=0V , TJ=55 | -5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=12V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-3A | 12.8 | S | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-3A | 10.2 | 14.3 | nC | |
| Qgs | Gate-Source Charge | 1.89 | 2.6 | |||
| Qgd | Gate-Drain Charge | 3.1 | 4.3 | |||
| Td(on) | Turn-On Delay Time | VDD=-10V , VGS=-4.5V , RG=3.3 , ID=-3A | 5.6 | 11.2 | ns | |
| Tr | Rise Time | 40.8 | 73 | |||
| Td(off) | Turn-Off Delay Time | 33.6 | 67 | |||
| Tf | Fall Time | 18 | 36 | |||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 857 | 1200 | pF | |
| Coss | Output Capacitance | 114 | 160 | |||
| Crss | Reverse Transfer Capacitance | 108 | 151 | |||
| IS | Continuous Source Current | VG=VD=0V , Force Current | -4.9 | A | ||
| ISM | Pulsed Source Current | -14 | A | |||
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | -1 | V | ||
| trr | Reverse Recovery Time | IF=-3A , di/dt=100A/s , TJ=25 | 21.8 | nS | ||
| Qrr | Reverse Recovery Charge | 6.9 | nC | |||
Note:
- 1. Data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
- 2. Data tested by pulsed, pulse width 300s, duty cycle 2%.
- 3. Power dissipation is limited by 150 junction temperature.
- 4. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
Package Mechanical Data-SOT-23
| Symbol | Dimensions in Millimeters | MIN. | MAX. |
|---|---|---|---|
| A | 0.900 | 1.150 | |
| A1 | 0.000 | 0.100 | |
| A2 | 0.900 | 1.050 | |
| b | 0.300 | 0.500 | |
| c | 0.080 | 0.150 | |
| D | 2.800 | 3.000 | |
| E | 1.200 | 1.400 | |
| E1 | 2.250 | 2.550 | |
| e | 0.950TYP | ||
| e1 | 1.800 | 2.000 | |
| L | 0.550REF | ||
| L1 | 0.300 | 0.500 | |
| 0 | 8 |
2409292333_Leiditech-DMG2305UXQ_C3647045.pdf
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