P Channel Enhancement Mode MOSFET Leiditech LM2301 Suitable for Load Switching and PWM Applications

Key Attributes
Model Number: LM2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
110mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
55pF
Output Capacitance(Coss):
75pF
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
405pF@10V
Gate Charge(Qg):
12nC@2.5V
Mfr. Part #:
LM2301
Package:
SOT-23
Product Description

Product Overview

The LM2301 is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 2.5V. This device is well-suited for applications such as load switching and Pulse Width Modulation (PWM). Its high power and current handling capability, along with its lead-free status and SOT-23 surface mount package, make it a versatile component for power management solutions.

Product Attributes

  • Brand: LM (Leiditech)
  • Technology: Advanced Trench Technology
  • Mode: P-Channel Enhancement Mode
  • Package: SOT-23
  • Certifications: Lead-free product acquired

Technical Specifications

Parameter Symbol Condition Min Typ Max Unit
General Features
Drain-Source Voltage VDS -20 V
Continuous Drain Current ID -3 A
RDS(ON) RDS(ON) VGS=-2.5V 89 140 m
RDS(ON) RDS(ON) VGS=-4.5V 64 110 m
Absolute Maximum Ratings (TA=25 unless otherwise noted)
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS 12 V
Drain Current-Continuous ID -3 A
Drain Current - Pulsed (Note 1) IDM -10 A
Maximum Power Dissipation PD 1 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 150
Thermal Characteristic
Thermal Resistance, Junction-to-Ambient (Note 2) RJA 125 /W
Electrical Characteristics (TA=25 unless otherwise noted)
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250A -20 -24 V
Zero Gate Voltage Drain Current IDSS VDS=-20V, VGS=0V -1 A
Gate-Body Leakage Current IGSS VGS=12V, VDS=0V 100 nA
On Characteristics (Note 3)
Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250A -0.4 -0.7 -1 V
Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-3A 64 110 m
Drain-Source On-State Resistance RDS(ON) VGS=-2.5V, ID=-2A 89 140 m
Forward Transconductance gFS VDS=-5V, ID=-2A 5 S
Dynamic Characteristics (Note 4)
Input Capacitance Ciss 405 PF
Output Capacitance Coss 75 PF
Reverse Transfer Capacitance Crss VDS=-10V, VGS=0V, F=1.0MHz 55 PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on) 11 nS
Turn-on Rise Time tr 35 nS
Turn-Off Delay Time td(off) 30 nS
Turn-Off Fall Time tf VDD=-10V, ID=-1A, VGS=-4.5V, RGEN=10 10 nS
Total Gate Charge Qg 3.3 12 nC
Gate-Source Charge Qgs 0.7 nC
Gate-Drain Charge Qgd VDS=-10V, ID=-3A, VGS=-2.5V 1.3 nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V, IS=1.3A -1.2 V
Diode Forward Current (Note 2) IS -3 A
Package Information (SOT-23)
Dimension A A 0.900 1.150 mm
Dimension A1 A1 0.000 0.100 mm
Dimension A2 A2 0.900 1.050 mm
Dimension b b 0.300 0.500 mm
Dimension c c 0.080 0.150 mm
Dimension D D 2.800 3.000 mm
Dimension E E 1.200 1.400 mm
Dimension E1 E1 2.250 2.550 mm
Dimension e e 0.950 (TYP) mm
Dimension e1 e1 1.800 2.000 mm
Dimension L L 0.550 (REF) mm
Dimension L1 L1 0.300 0.500 mm
Dimension 0 8
Ordering Information
Device Marking 2301
Package SOT-23
Reel Size 180mm
Tape width 8 mm
Quantity 3000 units

2206291815_Leiditech-LM2301_C3040118.pdf
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.