Sensitive Gate SCR KY BT169-23 Designed for AC Motor Speed Control and Power Regulation Applications
Key Attributes
Model Number:
BT169-23
Product Custom Attributes
Holding Current (Ih):
4mA
Voltage - On State(Vtm):
1.7V
Average Gate Power Dissipation (PG(AV)):
100mW
Current - On State(It(RMS)):
800mA
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
10A
SCR Type:
1 SCR
Operating Temperature:
-40℃~+110℃
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
BT169-23
Package:
SOT-23
Product Description
ShenZhenHanKingyuan Electronic BT169 Series 0.8A Sensitive Gate SCRs
The BT169 Series from ShenZhenHanKingyuan Electronic are sensitive gate SCRs designed for various applications. With an RMS on-state current of 0.8A and a peak repetitive off-state voltage of up to 600V, these SCRs are suitable for controlling AC power in devices such as washing machines, vacuum cleaners, massagers, and solid-state relays, as well as for AC motor speed regulation.
Product Attributes
- Brand: ShenZhenHanKingyuan Electronic
- Series: BT169 Series
- Type: Sensitive Gate SCR
- Origin: Shenzhen
- Trademark: KY logo (registered)
Technical Specifications
| Parameter | Conditions | BT169D | Unit |
|---|---|---|---|
| Repetitive Peak Off-State Voltage (VDRM, VRRM) | 600 | V | |
| Average On-state Current (IT(AV)) | 0.6 | A | |
| R.M.S On-State Current (IT(RMS)) | 0.8 | A | |
| Surge On-State Current (ITSM) | F=50Hz, Tp=10ms | 10 | A |
| It for fusing | Tp=10ms | 0.4 | As |
| Average Gate Power Dissipation (PG(AV)) | Tj=125C | 0.1 | W |
| Peak Gate Power Dissipation (PGM) | tp=20us, Tj=125C | 0.5 | W |
| Operating Junction Temperature (Tj) | -40~110 | C | |
| Storage Temperature (TSTG) | -40~150 | C | |
| Repetitive Peak Off-State Current (IDRM) | Tc=25C | 5 | uA |
| Repetitive Peak Off-State Current (IDRM) | Tc=110C | 100 | uA |
| Repetitive Peak Reverse Current (IRRM) | Tc=25C | 5 | uA |
| Repetitive Peak Reverse Current (IRRM) | Tc=110C | 100 | uA |
| Forward "on" voltage (VTM) | IT=1.2A, tp=380us | 1.7 | V |
| Gate non-trigger voltage (VGD) | VD=VDRM, Tj=110C,RGK=1k,RL=3.3K | 0.1 | V |
| Gate trigger voltage (VGT) | VD=12V ,IT=0.1A | 0.8 | V |
| Holding current (IH) | IT=50mA | 4 | mA |
| Latching current (IL) | IG=1.2 IGT | 6 | mA |
| Gate trigger current (IGT) | VD=12V ,IT=0.1A | 200 | uA |
| Critical-rate of rise of commutation voltage (dv/dt) | TJ=110C ,VD=2/3VDRM ,RGK=1K | 10 | V/us |
| Junction to Case Thermal Resistance (Rth(j-c)) | TO-92/ SOT-23 | 75 | /W |
| Junction to Case Thermal Resistance (Rth(j-c)) | SOT-89 | 45 | /W |
| Junction to Case Thermal Resistance (Rth(j-c)) | SOT-223 | 31 | /W |
2409271703_KY-BT169-23_C2831919.pdf
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