Low RDS ON P Channel MOSFET KUU AO3401 Suitable for Portable Devices and DC DC Converter Applications
Key Attributes
Model Number:
AO3401
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
RDS(on):
100mΩ@2.5V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
645pF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
AO3401
Package:
SOT-23
Product Description
Product Overview
This P-Channel 30V (D-S) MOSFET features exceptional on-resistance and maximum DC current capability due to its high-density cell design for extremely low RDS(ON). It is ideal for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: CJ (implied by www.cj-elec.com)
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | -4.1 | A | |||
| Pulsed Diode Current | IDM | -27 | A | |||
| Continuous Source-Drain Current (Diode Conduction) | IS | -2 | A | |||
| Power Dissipation | PD | 1.4 | W | |||
| Thermal Resistance from Junction to Ambient (t≤5s) | RθJA | 125 | °C/W | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | TSTG | -55 | +150 | °C | ||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID = -250µA | -30 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID = -250µA | -0.6 | -1.2 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS = ±12V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS = -30V, VGS =0V | 1 | µA | ||
| Drain-source on-state resistance | RDS(on) | VGS = -10V, ID = -2.8A | 50 | 60 | mΩ | |
| VGS = -4.5V, ID = -2.8A | 55 | 70 | mΩ | |||
| VGS = -2.5V, ID = -2A | 71 | 100 | mΩ | |||
| Forward transconductance | gfs | VDS = -4.5V, ID = -4.1A | 7 | S | ||
| Diode forward voltage | VSD | IS=1A,VGS=0V | -0.7 | -1.3 | V | |
| Input capacitance | Ciss | VDS = -15V,VGS =0V, f=1MHz | 645 | pF | ||
| Output capacitance | Coss | 80 | pF | |||
| Reverse transfer capacitance | Crss | 55 | pF | |||
| Total gate charge | Qg | VDS = -15V,VGS = -10V, ID =-4.1A | 14 | nC | ||
| Gate-source charge | Qgs | 1.5 | nC | |||
| Gate-drain charge | Qg | 2.5 | nC | |||
| Gate resistance | Rg | f=1MHz | 8 | Ω | ||
| Switching | td(on) | VDD= -15V RL=4Ω, ID ≈ -1A, VGEN=- 10V,Rg=3Ω | 6.3 | ns | ||
| tr | 3.2 | ns | ||||
| Switching | td(off) | 41 | ns | |||
| tf | 9 | ns | ||||
| Continuous Source-Drain Diode Current | IS | Tc=25°C | -1.3 | A | ||
| Pulsed Diode forward Current | ISM | -20 | A |
2410121931_KUU-AO3401_C2985640.pdf
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