Power Management P Channel MOSFET KUU AO4435 with High Speed Switching and Low RDS ON Characteristics
Key Attributes
Model Number:
AO4435
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10.5A
Operating Temperature -:
-50℃~+155℃@(Tj)
RDS(on):
18mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
150pF@15V
Input Capacitance(Ciss):
1.5nF@15V
Pd - Power Dissipation:
3W
Gate Charge(Qg):
29nC@15V
Mfr. Part #:
AO4435
Package:
SOP-8
Product Description
Product Overview
The AO4435 is a P-Channel MOSFET featuring Trench Power LV MOSFET technology with a high-density cell design for low RDS(ON). It offers high-speed switching capabilities and is suitable for applications such as battery protection, power management, and load switching.
Product Attributes
- Brand: Yongyutai (implied by website URL)
- Device Code: 4435A
- Marking: 4435A XXXX
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | |||||
| VDS | Drain-Source Voltage | -30 | V | ||
| VGS | Gate-Source Voltage | ±20 | V | ||
| TJ | Maximum Junction Temperature | 150 | °C | ||
| TSTG | Storage Temperature Range | -50 | 155 | °C | |
| ID | Tested Continuous Drain Current Tc=25°C | -10.5 | A | ||
| IDM | Pulse Drain Current Tc=25°C | -50 | A | ||
| IS | Diode Continuous Forward Current Tc=25°C | -10.5 | A | ||
| PD | Maximum Power Dissipation Mounted on Large Heat Sink | W | |||
| RθJA | Thermal Resistance Junction-Ambient | 42 | °C/W | ||
| Static Electrical Characteristics @ TJ = 25°C (unless otherwise noted) | |||||
| BV(BR)DSS | Drain-Source Breakdown Voltage VGS=0V, ID=-250μA | -30 | V | ||
| IDSS | Zero Gate Voltage Drain Current VDS=-30V, VGS=0V | -1 | μA | ||
| IGSS | Gate-Body Leakage Current VGS=±20V, VDS=0V | ±100 | nA | ||
| VGS(th) | Gate Threshold Voltage VDS=VGS, ID=-250μA | -1 | -1.5 | -3 | V |
| RDS(on) | Drain-Source On-State Resistance VGS=-10V, ID=-10A | 15 | 18 | mΩ | |
| Drain-Source On-State Resistance VGS=-4.5V, ID=-8A | 22 | 30 | mΩ | ||
| Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) | |||||
| Capacitance | CISS Input Capacitance | 1500 | pF | ||
| COSS Output Capacitance | 180 | pF | |||
| CRSS Reverse Transfer Capacitance | 150 | pF | |||
| Gate Charge | Qg Total Gate Charge | 29 | nC | ||
| Qgs Gate Source Charge | 5.4 | nC | |||
| Qgd Gate Drain Charge | 5.4 | nC | |||
| Switching Characteristics | td(on) Turn-on Delay Time | 10 | nS | ||
| tr Turn-on Rise Time | 45 | nS | |||
| td(off) Turn-Off Delay Time | 55 | nS | |||
| tf Turn-Off Fall Time | 60 | nS | |||
| Source-Drain Diode Characteristics | |||||
| VSD | Forward on voltage Tj=25°C, Is=-10A | -0.8 | -1.2 | V | |
2410122018_KUU-AO4435_C33551023.pdf
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