SOT 23 Package P Channel Enhancement Mode MOSFETs Highlighting KUU KFDN360P for Switching and Control
Key Attributes
Model Number:
KFDN360P
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
2A
RDS(on):
95mΩ@4.5V,1.5A
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Number:
1 P-Channel
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
420pF@15V
Mfr. Part #:
KFDN360P
Package:
SOT-23
Product Description
Product Overview
This document details the specifications for P-Channel Enhancement-Mode MOS FETs in a SOT-23 package. These transistors are designed for various electronic applications requiring efficient switching and control.
Product Attributes
- Brand: KFDN360P
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Notes |
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | (ID = -250uA,VGS=0V) | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | (ID = -250uA,VGS= VDS) | |
| Diode Forward Voltage Drop | VSD | -1 | V | (IS= -1A,VGS=0V) | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | (VGS=0V, VDS= -24V) | ||
| Gate Body Leakage | IGSS | +100 | nA | (VGS=+20V, VDS=0V) | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 60 | 80 | m | (ID= -2A,VGS= -10V) | |
| Static Drain-Source On-State Resistance | RDS(ON) | 95 | 125 | m | (ID= -1.5A,VGS= -4.5V) | |
| Input Capacitance | CISS | 420 | pF | (VGS=0V, VDS= -15V,f=1MHz) | ||
| Output Capacitance | COSS | 140 | pF | (VGS=0V, VDS= -15V,f=1MHz) | ||
| Turn-ON Time | t(on) | 10 | ns | (VDS= -15V, VGS= -10V, RGEN=6) | ||
| Turn-OFF Time | t(off) | 20 | ns | (VDS= -15V, VGS= -10V, RGEN=6) |
Maximum Ratings
| Characteristic | Symbol | Rating | Unit |
| Drain-Source Voltage | BVDSS | -30 | V |
| Gate- Source Voltage | VGS | +20 | V |
| Drain Current (continuous) | ID | -2 | A |
| Drain Current (pulsed) | IDM | -15 | A |
| Total Device Dissipation | PD | 1200 | mW |
| Junction Temperature | TJ | 150 | |
| Storage Temperature | Tstg | -55to+150 |
2410121519_KUU-KFDN360P_C2891695.pdf
Related Products
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
