TrenchFET Technology N Channel MOSFET KUU BSN20 with Low Input Capacitance and High Switching Speed
Key Attributes
Model Number:
BSN20
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
500mA
RDS(on):
5Ω@10V,500mA
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
22pF@10V
Pd - Power Dissipation:
600mW
Gate Charge(Qg):
800nC@10V
Mfr. Part #:
BSN20
Package:
SOT-23
Product Description
Product Overview
N-Channel 50-V(D-S) MOSFETs featuring TrenchFET technology for low on-resistance and fast switching speeds. Ideal for load switching in portable devices and DC/DC converters, offering low input capacitance and leakage. Lead-free and RoHS compliant.
Product Attributes
- Certifications: Lead Free By Design/RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 50 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 500 | mA | |||
| Pulsed Drain Current | IDM | 1.2 | A | |||
| Continuous Source-Drain Current(Diode Conduction) | IS | 200 | mA | |||
| Power Dissipation | PD | 0.6 | W | |||
| Thermal Resistance from Junction to Ambient (t≤5s) | RθJA | 200 | °C/W | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | TSTG | -55 | ~+150 | °C | ||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 50 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID = 250µA | 0.45 | 1.6 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS = ±20V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS = 50V, VGS =0V | 0.5 | µA | ||
| Drain-source on-state resistance | RDS(on) | VGS = 10V, ID = 500mA | 1.2 | 2 | Ω | |
| Drain-source on-state resistance | RDS(on) | VGS = 4.5V, ID = 200mA | 1.3 | 2.2 | Ω | |
| Forward transconductance | gfs | VDS = 10V, ID = 0.2A | 80 | mS | ||
| Diode forward voltage | VSD | IS=0.5A,VGS=0V | 0.85 | 1.5 | V | |
| Input capacitance | Ciss | VDS = 10V,VGS =0V, f=1MHz | 22 | pF | ||
| Output capacitance | Coss | 6 | pF | |||
| Reverse transfer capacitance | Crss | 4 | pF | |||
| Total gate charge | Qg | VDS = 25V,VGS = 10V, ID =0.5A | 800 | nC | ||
| Gate-source charge | Qgs | 100 | nC | |||
| Gate-drain charge | Qg | 100 | nC | |||
| Gate resistance | Rg | f=1MHz | 49 | Ω | ||
| Turn-on delay time | td(on) | VDD= 25V RL=25Ω, ID =0.5A, VGEN= 10V,Rg=50Ω | 3 | ns | ||
| Rise time | tr | 3.1 | ns | |||
| Turn-off delay time | td(off) | 9.5 | ns | |||
| Fall time | tf | 8.3 | ns | |||
| Continuous Source-Drain Diode Current | IS | Tc=25°C | 0.194 | A | ||
| Pulsed Diode forward Current | ISM | 1.2 | A |
2410121819_KUU-BSN20_C7587867.pdf
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