P Channel Enhancement Mode Power MOSFET KUU 4409 with Low Gate Voltage Operation and High Current Capacity
Key Attributes
Model Number:
4409
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
15A
RDS(on):
15mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
280pF
Number:
1 P-Channel
Output Capacitance(Coss):
410pF
Pd - Power Dissipation:
3.1W
Input Capacitance(Ciss):
2.9nF
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
4409
Package:
SOP-8
Product Description
Product Overview
The 4409 is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and the capability to operate with gate voltages as low as 4.5V. This MOSFET is designed for high power and current handling, making it suitable for applications like battery switches, load switches, and power management.
Product Attributes
- Brand: 4409
- Material: Not specified
- Origin: Not specified
- Color: Not specified
- Certifications: Lead free product is acquired
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | TA=25C, unless otherwise noted | - | - | -30 | V |
| VGS | Gate-Source Voltage | TA=25C, unless otherwise noted | - | 20 | - | V |
| ID | Drain Current @TA=25C | TA=25C, unless otherwise noted | - | - | -15 | A |
| IDM | Drain Current (Pulsed) a | TA=25C, unless otherwise noted | - | - | -60 | A |
| IAR | Avalanche Current | TA=25C, unless otherwise noted | - | - | 30 | A |
| EAR | Repetitive Avalanche Energy L=0.3mH | TA=25C, unless otherwise noted | - | 135 | - | mJ |
| PD | Total Power Dissipation @TA=25C | TA=25C, unless otherwise noted | - | 3.1 | - | W |
| PD | Total Power Dissipation @TA=75C | TA=25C, unless otherwise noted | - | 2.1 | - | W |
| IS | Maximum Diode Forward Current | TA=25C, unless otherwise noted | - | - | -2.1 | A |
| Tj, Tstg | Operating Junction and Storage Temperature Range | TA=25C, unless otherwise noted | -55 | - | +150 | C |
| RqJA | Thermal Resistance Junction to Ambient (PCB mounted)b | TA=25C, unless otherwise noted | - | 40 | - | C/W |
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250uA | -30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=-24V, VGS=0V | - | - | -1 | uA |
| IGSS | Gate-Body Leakage Current | VGS=25V, VDS=0V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=-250uA | -1.0 | -1.5 | -3.0 | V |
| IDS(on) | On State Drain Current | VDS=-5V, VGS=-10V | - | 60 | - | A |
| RDS(on) | Drain-Source On-State Resistance | VGS=-10V, ID=-15A | - | 12 | - | m |
| RDS(on) | Drain-Source On-State Resistance | VGS=-4.5V, ID=-12A | - | 13 | 15 | m |
| gFS | Forward Transconductance | VDS=-10V, ID=-5A | - | 26 | - | S |
| Ciss | Input Capacitance | VDS=-15V, VGS=0V, f=1MHz | - | 410 | - | pF |
| Coss | Output Capacitance | VDS=-15V, VGS=0V, f=1MHz | - | 280 | - | pF |
| Crss | Reverse Transfer Capacitance | VDS=-15V, VGS=0V, f=1MHz | - | - | - | pF |
| Rg | Gate Resistance | VDS=0V, VGS=0V, f=1MHz | - | 1 | - | |
| Qg | Total Gate Charge | VDS=-15V, ID=-10A, VGS=-10V | - | 48 | - | nC |
| Qgs | Gate-Source Charge | VDS=-15V, ID=-10A, VGS=-10V | - | 12 | - | nC |
| Qgd | Gate-Drain Charge | VDS=-15V, ID=-10A, VGS=-10V | - | 14 | - | nC |
| td(on) | Turn-on Delay Time | VDD=-15V, ID=-10A, VGS=-10V, RG=3W | - | 15 | - | nS |
| tr | Turn-on Rise Time | VDD=-15V, ID=-10A, VGS=-10V, RG=3W | - | 11 | - | nS |
| td(off) | Turn-off Delay Time | VDD=-15V, ID=-10A, VGS=-10V, RG=3W | - | 44 | - | nS |
| tf | Turn-off Fall Time | VDD=-15V, ID=-10A, VGS=-10V, RG=3W | - | 21 | - | nS |
| trr | Reverse Recovery Time | IS=-12A, dI/ dt=100A/ uS | - | 33 | 40 | nS |
| Qrr | Reverse Recovery Charge | IS=-12A, dI/ dt=100A/ uS | - | 23 | - | nC |
| VSD | Drain-Source Diode Forward Voltage | VGS=0V, IS=-1A | - | - | -1 | V |
| IS | Drain-Source Diode Forward Current | VGS=0V, IS=-1A | - | - | -2.1 | A |
2410121714_KUU-4409_C2922759.pdf
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