Power management MOSFET KUU SI2312 20V N channel enhancement mode transistor for electronic circuits
Key Attributes
Model Number:
SI2312
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.8A
RDS(on):
16mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
700mV
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
117pF
Input Capacitance(Ciss):
888pF
Output Capacitance(Coss):
133pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
SI2312
Package:
SOT-23
Product Description
Product Overview
The SI2312 is a 20V N-channel enhancement mode MOSFET designed for various electronic applications. It offers efficient switching characteristics and is suitable for power management tasks.
Product Attributes
- Product Marking: SI2312=A12
- Brand: Yongyutai
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Characteristic | Symbol | Min | Type | Max | Unit | Notes |
| Drain-Source Breakdown Voltage | BVDSS | 20 | - | - | V | (ID =250uA,VGS=0V) |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1.2 | V | (ID =250uA,VGS= VDS) |
| Zero Gate Voltage Drain Current | IDSS | - | - | 1 | uA | (VGS=0V, VDS= 20V) |
| Gate Body Leakage | IGSS | - | - | +100 | nA | (VGS=+12V, VDS=0V) |
| Static Drain-Source On-State Resistance | RDS(ON) | - | 16 | 18 | m | (ID=6.8A,VGS=4.5V) |
| 22 | 33 | (ID=3A,VGS=2.5V) | ||||
| Diode Forward Voltage Drop | VSD | - | - | 1.2 | V | (ISD=6.8A,VGS=0V) |
| Input Capacitance | CISS | - | 888 | - | pF | (VGS=0V, VDS=10V,f=1MHz) |
| Common Source Output Capacitance | COSS | - | 133 | - | pF | (VGS=0V, VDS=10V,f=1MHz) |
| Reverse Transfer Capacitance | CRSS | - | 117 | - | pF | (VGS=0V, VDS=10V,f=1MHz) |
| Total Gate Charge | Qg | - | 11 | - | nC | (VDS=10V, ID=6.8A, VGS=4.5V) |
| Gate Source Charge | Qgs | - | 2 | - | nC | (VDS=10V, ID=6.8A, VGS=4.5V) |
| Gate Drain Charge | Qgd | - | 3 | - | nC | (VDS=10V, ID=6.8A, VGS=4.5V) |
| Turn-ON Delay Time | td(on) | - | 7 | - | ns | (VDS=10V ID=6.8A, RGEN=3,VGS=4.5V) |
| Turn-ON Rise Time | tr | - | 46 | - | ns | (VDS=10V ID=6.8A, RGEN=3,VGS=4.5V) |
| Turn-OFF Delay Time | td(off) | - | 30 | - | ns | (VDS=10V ID=6.8A, RGEN=3,VGS=4.5V) |
| Turn-OFF Fall Time | tf | - | 52 | - | ns | (VDS=10V ID=6.8A, RGEN=3,VGS=4.5V) |
Absolute Maximum Ratings
| Characteristic | Symbol | Rating | Unit |
| Drain-Source Voltage | BVDSS | 20 | V |
| Gate- Source Voltage | VGS | +12 | V |
| Drain Current (continuous) | IDat TA = 25C | 6.8 | A |
| Drain Current (pulsed) | IDM | 30 | A |
| Total Device Dissipation | PD(at TA = 25C) | 1250 | mW |
| Thermal Resistance Junction-Ambient | RJA | 100 | /W |
| Junction/Storage Temperature | TJ,Tstg | -55~150 |
2508011220_KUU-SI2312_C49446788.pdf
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