P Channel Enhancement Mode Transistor KUU KIRFR9024NTRTBF with 1.5 Watt Power Dissipation Capability
Key Attributes
Model Number:
KIRFR9024NTRTBF
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
8.8A
Operating Temperature -:
-
RDS(on):
200mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 P-Channel
Output Capacitance(Coss):
360pF
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
570pF
Gate Charge(Qg):
19nC
Mfr. Part #:
KIRFR9024NTRTBF
Package:
TO-252
Product Description
Product Overview
This P-Channel 60-V (D-S) Enhancement Mode Field Effect Transistor offers a third-generation Power MOSFET design. It provides an optimal balance of fast switching, rugged device construction, low on-resistance, and cost-effectiveness. Designed for surface mounting using vapor phase, infrared, or wave soldering, it also features a straight lead version for through-hole mounting. Power dissipation up to 1.5 W is achievable in typical surface mount applications.
Product Attributes
- Brand: Vishay
- Certifications: Lead (Pb)-free Available
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -8.8 | A | |||
| Pulsed Diode Current | IDM | -35 | A | |||
| Power Dissipation | PD | 50 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | (t10s) | 45 | /W | ||
| Single Pulse Avalanche Energy | EAS | 300 | mJ | |||
| Repetitive Avalanche Current | IAR | -8.8 | A | |||
| Repetitive Avalanche Energy | EAR | 5.0 | mJ | |||
| Peak Diode Recovery dV/dt | dV/dt | -4.5 | V/ns | |||
| Maximum Junction-to-Ambient | RthJA | 110 | /W | |||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +155 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = - 250A | -60 | V | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS =VGS, ID = -250A | -2 | -4 | V | |
| Gate-Source Leakage | IGSS | VDS =0V, VGS = 20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -60V, VGS =0V | -100 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -10V, ID = -5.3A | 75 | 200 | m | |
| Forward Transconductance | gfs | VDS = -25V, ID = -5.3A | 2.9 | S | ||
| Diode Forward Voltage | VSD | IS= -7.2A, VGS=0V | -1.8 | V | ||
| Input Capacitance | Ciss | VDS = -25V, VGS =0V, f=1MHz | 570 | pF | ||
| Output Capacitance | Coss | VDS = -25V, VGS =0V, f=1MHz | 360 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = -25V, VGS =0V, f=1MHz | 65 | pF | ||
| Total Gate Charge | Qg | VDS = -48V, VGS = - 10V, ID = -11A | 19 | nC | ||
| Gate-Source Charge | Qgs | VDS = -48V, VGS = - 10V, ID = -11A | 5.4 | nC | ||
| Gate-Drain Charge | Qgd | VDS = -48V, VGS = - 10V, ID = -11A | 11 | nC | ||
| Turn-on Delay Time | td(on) | VDD= -30V RD=3, ID = -11A, VGEN= -10V, Rg= 18 | 13 | ns | ||
| Rise Time | tr | VDD= -30V RD=3, ID = -11A, VGEN= -10V, Rg= 18 | 68 | ns | ||
| Turn-off Delay Time | td(off) | VDD= -30V RD=3, ID = -11A, VGEN= -10V, Rg= 18 | 15 | ns | ||
| Fall Time | tf | VDD= -30V RD=3, ID = -11A, VGEN= -10V, Rg= 18 | 29 | ns | ||
| Internal Drain Inductance | LD | Between lead, 6 mm (0.25") from package and center of die contact | 4.5 | nH | ||
| Internal Source Inductance | LS | Between lead, 6 mm (0.25") from package and center of die contact | 7.5 | nH | ||
| Reverse Recovery Time | trr | IF= -11A, dI/dt=100A/s | 100 | 200 | ns | |
| Reverse Recovery Charge | Qrr | IF= -11A, dI/dt=100A/s | 0.32 | 0.64 | C | |
| Continuous Source-Drain Diode Current | IS | -8.8 | A | |||
| Pulsed Diode Forward Current | ISM | -35 | A |
2410121536_KUU-KIRFR9024NTRTBF_C2939002.pdf
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