Low on resistance n channel mosfet KUU K2SK4003 7 F suitable for portable equipment applications
Key Attributes
Model Number:
K2SK4003-7-F
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
13Ω@2.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@100uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Output Capacitance(Coss):
9pF
Pd - Power Dissipation:
200mW
Input Capacitance(Ciss):
13pF
Mfr. Part #:
K2SK4003-7-F
Package:
SOT-23
Product Description
Product Overview
This N-channel MOSFET features low on-resistance and fast switching speed. Its low voltage drive capability makes it ideal for portable equipment and allows for easily designed drive circuits. It is also easily paralleled.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 10A | 30 | V | ||
| Drain-Source Breakdown Voltage | DSS | VDS =30V,VGS = 0V | 0.2 | A | ||
| Gate Source leakage current | IGSS | VGS =20V, VDS = 0V | 500 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS = 3V, ID =100A | 0.8 | 1.5 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS = 4V, ID =10mA | 8 | |||
| Drain-Source On-Resistance | RDS(on) | VGS =2.5V,ID =1mA | 13 | |||
| Forward Transconductance | gFS | VDS =3V, ID = 10mA | 20 | mS | ||
| Input Capacitance | Ciss | VDS =5V,VGS =0V,f =1MHz | 13 | pF | ||
| Output Capacitance | Coss | VDS =5V,VGS =0V,f =1MHz | 9 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =5V,VGS =0V,f =1MHz | 4 | pF | ||
| Turn-On Delay Time | td(on) | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 15 | ns | ||
| Rise Time | tr | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 35 | ns | ||
| Turn-Off Delay Time | td(off) | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 80 | ns | ||
| Fall Time | tf | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 80 | ns | ||
| Continuous Drain Current | ID | 0.1 | A | |||
| Power Dissipation | PD | 0.2 | W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Thermal Resistance from Junction to Ambient | RJA | 625 | /W | |||
| Gate-Source Voltage | VGSS | 20 | V |
2410121313_KUU-K2SK4003-7-F_C2892536.pdf
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