650V 5A N Channel MOSFET KUU 5N65 with Low Gate Charge and High Pulse Drain Current Capability
Key Attributes
Model Number:
5N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
5A
RDS(on):
2.4Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
27pF
Pd - Power Dissipation:
40W
Output Capacitance(Coss):
37pF
Input Capacitance(Ciss):
584pF
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
5N65
Package:
TO-252
Product Description
Product Overview
The 5N65 is a 650V/5A N-Channel MOSFET designed for power switching applications. It features low gate charge, low Ciss, fast switching, 100% avalanche tested, and improved dv/dt capability, making it suitable for efficient power conversion.
Product Attributes
- Brand: Yongyutai (implied by website)
- Device Code: 5N65
- Product Code: XXXXXX
- Package: TO-252
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 650 | V | |||
| VGS | Gate-Source Voltage | ±30 | V | |||
| TJ | Maximum Junction Temperature | 150 | °C | |||
| TSTG | Storage Temperature Range | -50 | to | 155 | °C | |
| ID | Continuous Drain Current | Tc=25°C | 5 | A | ||
| IDM | Pulse Drain Current | Tc=25°C | 16 | A | ||
| IS | Diode Continuous Forward Current | Tc=25°C, Mounted on Large Heat Sink | 5 | A | ||
| PD | Maximum Power Dissipation | Tc=25°C | 40 | W | ||
| EAS | Single pulse avalanche energy | 138 | mJ | |||
| Static Electrical Characteristics | ||||||
| BV(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250µA | 650 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=650V, VGS=0V | -- | -- | 1 | µA |
| IGSS | Gate-Body Leakage Current | VGS=±30V, VDS=0V | -- | -- | ±100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250µA | 2 | -- | 4 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=10V, ID=2A | -- | 2.4 | 2.92 | Ω |
| Dynamic Electrical Characteristics | ||||||
| CISS | Input Capacitance | VDS=520V, VGS=10V, f=1MHz | -- | 584 | -- | pF |
| COSS | Output Capacitance | VDS=520V, VGS=10V, f=1MHz | -- | 37 | -- | pF |
| CRSS | Reverse Transfer Capacitance | VDS=520V, VGS=10V, f=1MHz | -- | 27 | -- | pF |
| Switching Characteristics | ||||||
| Qg | Total Gate Charge | VDD=325V, ID=3A, VGS=10V, RG=10Ω | -- | 13 | -- | nC |
| Qgs | Gate Source Charge | VDD=325V, ID=3A, VGS=10V, RG=10Ω | -- | 5.5 | -- | nC |
| Qgd | Gate Drain Charge | VDD=325V, ID=3A, VGS=10V, RG=10Ω | -- | 2.5 | -- | nC |
| td(on) | Turn-on Delay Time | VDD=325V, ID=3A, VGS=10V, RG=10Ω | -- | 10.5 | -- | nS |
| tr | Turn-on Rise Time | VDD=325V, ID=3A, VGS=10V, RG=10Ω | -- | 1.2 | -- | nS |
| td(off) | Turn-Off Delay Time | VDD=325V, ID=3A, VGS=10V, RG=10Ω | -- | 21.5 | -- | nS |
| tf | Turn-Off Fall Time | VDD=325V, ID=3A, VGS=10V, RG=10Ω | -- | 4 | -- | nS |
| Source-Drain Diode Characteristics | ||||||
| VSD | Forward on voltage | Tj=25°C, Is=2A | -- | -- | 1.2 | V |
2507221720_KUU-5N65_C49396352.pdf
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