N Channel Enhancement Mode MOSFET KUU 2N7002M3T5G with Low Threshold Voltage and Fast Switching Speed
Key Attributes
Model Number:
2N7002M3T5G
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
5Ω@10V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
40pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
-
Mfr. Part #:
2N7002M3T5G
Package:
SOT-723
Product Description
Product Overview
The N-Channel Enhancement Mode MOSFET features an advanced trench process technology, offering low threshold voltage and fast switching speed. It is Halogen-Free & Lead-Free and ESD protected up to 2KV (HBM). Ideal for load switching in portable devices and as a voltage-controlled small signal switch.
Product Attributes
- Brand: Yongyutai
- Marking: 72K
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | (at Ta = 25unless otherwise specified) | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 0.34 | A | |||
| Peak Drain Current, Pulsed | IDM | 1.2 | A | |||
| Power Dissipation | Ptot | 0.15 | W | |||
| Operating Junction Temperature | TJ | -55 | 150 | |||
| Storage Temperature Range | Tstg | -55 | 150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance from Junction to Ambient | RθJA | 833 | Ω/W | Device mounted on FR-4 substrate PC board, 2ozcopper, with 1-inch square copper plate in still air. | ||
| Static Parameters | ||||||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | at ID = 250 µA | ||
| Drain-Source Leakage Current | IDSS | 1 | µA | at VDS =60 V, VGS=0V | ||
| Gate Leakage Current | IGSS | ±10 | µA | at VGS = ± 20 V | ||
| Gate-Source Threshold Voltage | VGS(th) | 1 | 2 | V | at VDS = VGS, ID = 250µA | |
| Drain-Source On-State Resistance | RDS(on) | 1.6 | 3 | Ω | at VGS = 10 V, ID = 300mA | |
| 2 | 5 | Ω | at VGS =4.5V, ID = 200mA | |||
| Dynamic Parameters | ||||||
| Gate resistance | Rg | 2 | Ω | at VDS = 0 V, VGS=0V, f = 1 MHz | ||
| Forward Transconductance | gfs | 80 | S | at VDS =10V, ID =200mA | ||
| Input Capacitance | Ciss | 40 | pF | at VDS=10V, VGS=0V, f=1MHz | ||
| Output Capacitance | Coss | 30 | pF | at VDS=10V, VGS=0V, f=1MHz | ||
| Reverse Transfer Capacitance | Crss | 10 | pF | at VDS=10V, VGS=0V, f=1MHz | ||
| Turn-On Delay Time | td(on) | 10 | nS | at VDD=25V, VGS =10V, RL= 250Ω, RGS=50Ω, RGen=25Ω | ||
| Turn-Off Delay Time | td(off) | 15 | nS | at VDD=25V, VGS =10V, RL= 250Ω, RGS= 50Ω, RGen=25Ω | ||
| Body-Diode Parameters | ||||||
| Drain-Source Diode Forward Voltage | VSD | 0.97 | 1.5 | V | at IS =200mA, VGS = 0 V | |
| Body Diode Reverse Recovery Time | trr | 30 | nS | at VGS = 0 V, IS =300mA, VR =25V, di/dt = -100 A / µs | ||
| Body Diode Reverse Recovery Charge | Qr | 30 | nC | at VGS=0 V, IS =300mA, VR =25V, di/dt = -100 A / µs | ||
2411041002_KUU-2N7002M3T5G_C42375086.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
