Low RDS on N Channel MOSFET KUU 2N7002KW Voltage Controlled Small Signal Switch for Portable Devices
Key Attributes
Model Number:
2N7002KW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
RDS(on):
5.3Ω@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
40pF
Pd - Power Dissipation:
200mW
Mfr. Part #:
2N7002KW
Package:
SOT-323
Product Description
Product Overview
The 2N7002KW is an N-Channel MOSFET featuring a high-density cell design for low RDS(on). It functions as a voltage-controlled small-signal switch, offering a rugged and reliable solution with high saturation current capability and ESD protection. This MOSFET is ideal for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: yongyutai
- Package: SOT-323
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =250A | 60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID =1mA | 1 | 1.3 | 2.5 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS =48V,VGS = 0V | 1 | A | ||
| Gate-Source Leakage Current | IGSS | VGS =20V, VDS = 0V | 10 | A | ||
| Drain-Source On-Resistance | RDS(on) | VGS =4.5V, ID =200mA | 1.1 | 5.3 | ||
| Drain-Source On-Resistance | RDS(on) | VGS =10V, ID =500mA | 0.9 | 5 | ||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 40 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 30 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 10 | pF | ||
| Turn-on Delay Time | td(on) | VGS=10V,VDD=50V, RG=50 RGS=50, RL=250 | 10 | ns | ||
| Turn-off Delay Time | td(off) | VGS=10V,VDD=50V, RG=50 RGS=50, RL=250 | 15 | ns | ||
| Reverse Recovery Time | trr | VGS=0V,IS=300mA,VR=25V, dIs/dt=-100A/us | 30 | ns | ||
| Recovered Charge | Qr | VGS=0V,IS=300mA,VR=25V dIs/dt=-100A/us | 30 | nC | ||
| Gate-Source Breakdown Voltage | BVGSO | Igs=1mA(Open Drain) | 21.5 | 30 | V | |
| Diode Forward Voltage | VSD | IS=300mA, VGS = 0V | 1.5 | V | ||
| Continuous Diode Forward Current | IS | 0.2 | A | |||
| Pulsed Diode Forward Current | ISM | (note1) | 0.53 | A |
2411121111_KUU-2N7002KW_C41417501.pdf
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