Low On State Resistance P Channel MOSFET KUU KAO3407 Suitable for Portable Device Power Management
Key Attributes
Model Number:
KAO3407
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
RDS(on):
110mΩ@4.5V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
520pF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
9.2nC@10V
Mfr. Part #:
KAO3407
Package:
SOT-23
Product Description
Product Overview
The KAO3407 is a P-Channel 30V Power MOSFET featuring TrenchFET technology. It is designed for applications such as load switching in portable devices and DC/DC converters. Its key advantages include low on-state resistance (RDS(on)) and efficient power handling.
Product Attributes
- Brand: KAO
- Model: KAO3407
- Type: P-Channel MOSFET
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | -4.1 | A | |||
| Pulsed Diode Current | IDM | -25 | A | |||
| Continuous Source-Drain Current (Diode Conduction) | IS | -1 | A | |||
| Power Dissipation | PD | Ta=25 | 1.4 | W | ||
| Thermal Resistance from Junction to Ambient | RJA | t≤5s | 125 | /W | ||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID = -250µA | -30 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID = -250µA | -1 | -2 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS = ±20V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS = -30V, VGS =0V | 1 | µA | ||
| Drain-source on-state resistance | RDS(on) | VGS = -10V, ID = -4A | 48 | 80 | mΩ | |
| Drain-source on-state resistance | RDS(on) | VGS = -4.5V, ID = -1.5A | 61 | 110 | mΩ | |
| Forward transconductance | gfs | VDS = -4.5V, ID = -4A | 5.5 | S | ||
| Diode forward voltage | VSD | IS=-1A,VGS=0V | -0.8 | -1.3 | V | |
| Input capacitance | Ciss | VDS = -15V,VGS =0V, f=1MHz | 520 | pF | ||
| Output capacitance | Coss | VDS = -15V,VGS =0V, f=1MHz | 100 | pF | ||
| Reverse transfer capacitance | Crss | VDS = -15V,VGS =0V, f=1MHz | 65 | pF | ||
| Total gate charge | Qg | VDS = -15V,VGS = -10V, ID = -4.1A | 9.2 | nC | ||
| Gate-source charge | Qgs | VDS = -15V,VGS = -10V, ID = -4.1A | 1.6 | nC | ||
| Gate-drain charge | Qg d | VDS = -15V,VGS = -10V, ID = -4.1A | 2.2 | nC | ||
| Gate resistance | Rg | f=1MHz | 7.5 | 11.5 | Ω | |
| Turn-on delay time | td(on) | VDS= -15V RL=4Ω, ID ≈ -1A, VGEN= -10V,Rg=3Ω | 7.5 | ns | ||
| Rise time | tr | VDS= -15V RL=4Ω, ID ≈ -1A, VGEN= -10V,Rg=3Ω | 5.5 | ns | ||
| Turn-off delay time | td(off) | VDS= -15V RL=4Ω, ID ≈ -1A, VGEN= -10V,Rg=3Ω | 19 | ns | ||
| Fall time | tf | VDS= -15V RL=4Ω, ID ≈ -1A, VGEN= -10V,Rg=3Ω | 7 | ns | ||
| Continuous Source-Drain Diode Current | IS | Tc=25 | -2.3 | A | ||
| Pulsed Diode forward Current | ISM | -20 | A |
2410121738_KUU-KAO3407_C2891694.pdf
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