N Channel MOSFET KUU WNM4002 3 TR with fast switching speed and low on resistance in SOT 523 package
Key Attributes
Model Number:
WNM4002-3/TR
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
RDS(on):
8Ω@4V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
1.5V@100uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Output Capacitance(Coss):
9pF
Input Capacitance(Ciss):
13pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
WNM4002-3/TR
Package:
SOT-523
Product Description
Product Overview
This N-Channel MOSFET in a SOT-523 surface mount plastic package offers low on-resistance, fast switching speed, and is ideal for low-voltage drive applications in portable equipment. Its easily designed drive circuits and suitability for paralleling make it a versatile component. It is RoHS Compliant & Green EMC with a matte tin lead finish.
Product Attributes
- Package: SOT-523
- Lead Finish: Matte Tin(Sn)
- Certifications: RoHS Compliant & Green EMC
- Weight: approx. 0.002g
- Device Marking Code: KN
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | TA = 25C unless otherwise noted | 30 | V | ||
| Continuous Gate-Source Voltage | VGS | TA = 25C unless otherwise noted | 20 | V | ||
| Continuous Drain Current | ID | TA = 25C unless otherwise noted | 100 | mA | ||
| Power Dissipation | PD | TA = 25C unless otherwise noted | 150 | mW | ||
| Thermal Resistance Junction to Ambient | RJA | TA = 25C unless otherwise noted | 833 | C /W | ||
| Storage Temperature Range | TSTG | TA = 25C unless otherwise noted | -55 | +150 | C | |
| Operating Junction Temperature | TJ | TA = 25C unless otherwise noted | +150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=10uA | 30 | Volts | ||
| Gate-Body Leakage | IGSS | VDS=0V, VGS=20V | 1 | uA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | A | ||
| Gate-Threshold Voltage | Vth(GS) | VDS=3V, ID=100uA | 0.8 | 1.5 | Volts | |
| Drain-Source On-Resistance | RDS(on) | VGS=4V, ID=10mA | 8 | |||
| Drain-Source On-Resistance | RDS(on) | VGS=2.5V, ID=1mA | 13 | |||
| Forward Trans Conductance | gfs | VDS=3V, ID=10mA | 20 | mS | ||
| Drain-Source Diode Forward Voltage | VSD | IS=115mA, VGS=0V | 1.2 | V | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 5V, VGS = 0V, f = 1.0MHz | 13 | pF | ||
| Output Capacitance | Coss | VDS = 5V, VGS = 0V, f = 1.0MHz | 9 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 5V, VGS = 0V, f = 1.0MHz | 4 | pF | ||
| Switching Characteristics | ||||||
| Turn-on Time | tD(on) | VDD=5V, RL=500, ID=10mA, VGs=5V, RG = 10 | 15 | nS | ||
| Turn-off Time | tD(off) | VDD=5V, RL=500, ID=10mA, VGs=5V, RG = 10 | 80 | nS | ||
2410121618_KUU-WNM4002-3-TR_C2985646.pdf
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