60 Volt N Channel MOSFET KUU SI2308 Suitable for DC DC Converters and Portable Device Load Switching
Key Attributes
Model Number:
SI2308
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
RDS(on):
100mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 N-channel
Input Capacitance(Ciss):
247pF
Pd - Power Dissipation:
750mW
Gate Charge(Qg):
4.5nC@4.5V
Mfr. Part #:
SI2308
Package:
SOT-23
Product Description
Product Overview
The SI2308 is an N-Channel 60-V (D-S) MOSFET featuring TrenchFET Power MOSFET technology. It is designed for applications such as load switching in portable devices and DC/DC converters. Key specifications include a maximum drain-source voltage of 60V and low on-state resistance.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 3 | A | |||
| Pulsed Diode Current | IDM | A | ||||
| Continuous Source-Drain Current(Diode Conduction) | IS | 0.8 | A | |||
| Power Dissipation | PD | 0.75 | W | |||
| Thermal Resistance from Junction to Ambient (t5s) | RJA | 150 | /W | |||
| Operating Junction | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID = 250A | 60 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID = 250A | 0.9 | 2 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS = ±20V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS = 60V, VGS =0V | 1 | µA | ||
| Drain-source on-state resistance | RDS(on) | VGS = 10V, ID = 1A | 72 | 95 | mΩ | |
| VGS = 4.5V, ID = 1A | 82 | 100 | mΩ | |||
| Forward transconductance | gfs | VDS = 4.5V, ID = 3A | 7 | S | ||
| Diode forward voltage | VSD | IS=1A,VGS=0V | 0.7 | 1.2 | V | |
| Input capacitance | Ciss | VDS =10V,VGS =0V, f=1MHz | 247 | pF | ||
| Output capacitance | Coss | 34 | pF | |||
| Reverse transfer capacitance | Crss | 20 | pF | |||
| Total gate charge | Qg | VDS = 10V,VGS = 4.5V, ID = 3A | 6 | 4.5 | nC | |
| Gate-source charge | Qgs | 1 | nC | |||
| Gate-drain charge | Qg | 1.3 | nC | |||
| Gate resistance | Rg | f=1MHz | 5 | Ω | ||
| Turn-on delay time | td(on) | VDD= 10V RL=6Ω, ID ≈ 1A, VGEN= 4.5V,Rg=6Ω | 7 | 11 | ns | |
| Rise time | tr | 12 | 18 | ns | ||
| Turn-off delay time | td(off) | 14 | 25 | ns | ||
| Fall time | tf | 6 | 10 | ns | ||
| Continuous Source-Drain Diode Current | IS | Tc=25℃ | 1.2 | A | ||
| Pulsed Diode forward Current | ISM | 20 | A | |||
2410251538_KUU-SI2308_C42369115.pdf
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