Power MOSFET KUU 30N06 60V 30A N Channel with Ultra Low RDS ON and High Junction Temperature Tolerance
Key Attributes
Model Number:
30N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
30A
RDS(on):
30mΩ@10V,10A
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
41.5W
Input Capacitance(Ciss):
1.05nF@30V
Gate Charge(Qg):
26nC@30V
Mfr. Part #:
30N06
Package:
TO-252
Product Description
Product Overview
This 60V/30A N-Channel MOSFET features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. Its excellent package provides good heat dissipation, making it ideal for power switching applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | ||||||
| VDS | Drain-Source Breakdown Voltage | VGS=0VID=250A | 60 | -- | -- | V |
| VGS | Gate-Source Voltage | -- | -- | 20 | V | |
| TJ | Maximum Junction Temperature | -- | -- | 150 | C | |
| TSTG | Storage Temperature Range | -50 | -- | 155 | C | |
| IS | Diode Continuous Forward Current | Tc=25C | -- | -- | 30 | A |
| IDM | Pulse Drain Current | Tc=25C | -- | -- | 100 | A |
| ID | Tested Continuous Drain Current@GS=10V | Tc=25C | -- | -- | 30 | A |
| PD | Maximum Power Dissipation | Mounted on Large Heat Sink | -- | -- | 41.5 | W |
| EAS | Single pulse avalanche energyNote1 | L=0.5mH, VDD=30V, Start TJ=25. | -- | 48 | -- | mJ |
| Electrical Characteristics (TJ=25 unless otherwise noted) | ||||||
| BV(BR)DSS | Drain-Source Breakdown Voltage | VGS=0VID=250A | 60 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=60VVGS=0V | -- | -- | 1 | uA |
| IGSS | Gate-Body Leakage Current | VGS=20VVDS=0V | -- | -- | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGSID=250A | 1.2 | 1.7 | 2.5 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=10V ID=10A | -- | 22 | 30 | m |
| VGS=4.5VID=5A | -- | 30 | 40 | m | ||
| CISS | Input Capacitance | VDS=30VVGS=0V f=1MHz | -- | 1050 | -- | pF |
| COSS | Output Capacitance | VDS=30VVGS=0V f=1MHz | -- | 65 | -- | pF |
| CRSS | Reverse Transfer Capacitance | VDS=30VVGS=0V f=1MHz | -- | 55 | -- | pF |
| Qg | Total Gate Charge | VDD=30VID=10A VGS=10V | -- | 26 | -- | nC |
| Qgs | Gate Source Charge | VDD=30VID=10A VGS=10V | -- | 5.7 | -- | nC |
| Qgd | Gate Drain Charge | VDD=30VID=10A VGS=10V | -- | 5.2 | -- | nC |
| td(on) | Turn-on Delay Time | VDD=30VID=10A VGS=10VRG=3 | -- | 8.4 | -- | nS |
| tr | Turn-on Rise Time | VDD=30VID=10A VGS=10VRG=3 | -- | 8.5 | -- | nS |
| td(off) | Turn-Off Delay Time | VDD=30VID=10A VGS=10VRG=3 | -- | 36 | -- | nS |
| tf | Turn-Off Fall Time | VDD=30VID=10A VGS=10VRG=3 | -- | 5 | -- | nS |
| VSD | Forward on voltage | Tj=25Is=10A | -- | 0.8 | 1.2 | V |
2409302231_KUU-30N06_C7424669.pdf
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