Silicon Carbide MOSFET LGE LGE3M35120Q Featuring Fast Intrinsic Diode and Low On Resistance for Power
Key Attributes
Model Number:
LGE3M35120Q
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
69A
Operating Temperature -:
-55℃~+175℃
RDS(on):
45mΩ
Gate Threshold Voltage (Vgs(th)):
3.7V
Reverse Transfer Capacitance (Crss@Vds):
9pF
Output Capacitance(Coss):
128pF
Pd - Power Dissipation:
300W
Input Capacitance(Ciss):
2.66nF
Gate Charge(Qg):
135nC
Mfr. Part #:
LGE3M35120Q
Package:
TO-247-4
Product Description
Product Overview
The LGE3M35120Q is a Silicon Carbide Power MOSFET designed for high-performance applications requiring high blocking voltage and high-frequency operation. It offers low on-resistance and a fast intrinsic diode with low reverse recovery, contributing to higher system efficiency and reliability. This device is suitable for parallel operation without thermal runaway and is ideal for high-temperature applications and hard switching scenarios.
Product Attributes
- Brand: LGE
- Material: Silicon Carbide
- Package: TO-247-4
- Marking: LGE3M35120Q
- Caution: Sensitive to electrostatic discharge. Follow ESD handling procedures.
Technical Specifications
| Parameter | Symbol | Test conditions | Value | Unit |
| Maximum Ratings | VDSmax | VGS=0V, ID=100A | 1200 | V |
| VGSmax | AC (f>1 Hz) | -10 / +25 | V | |
| VGSop | static | -5 / +20 | V | |
| ID | VGS = 20V, TC=25C | 69 | A | |
| ID(pulse) | TC=25C | 114 | A | |
| PD | TC=25C | 300 | W | |
| EAS | VDD = 100V, VGS=20V, L=2mH | 576 | mJ | |
| Electrical Characteristics | V(BR)DSS | VGS = 0V, ID = 100A | 1200 | V |
| VGS(th) | VDS = VGS, ID = 10mA | 1.8 - 3.7 | V | |
| IDSS | VDS = 1200V, VGS = 0V | 0 - 150 | A | |
| IGSS | VGS = 20V, VDS = 0V | 0 - 200 | nA | |
| RDS(on) | VGS = 20V, ID = 40 A | 33 - 45 | m | |
| gfs | VDS = 20V, ID = 40 A | 24 - 37 | S | |
| Ciss | VDS = 1000V, VGS = 0V f = 1MHz | 2660 | pF | |
| Qg | VDS = 800V, VGS = -5V / 20V ID = 40 A, | 135 | nC | |
| EON | VDS = 800 V, VGS = -5V/20V, ID = 40A, RG(ext) =2, L=100H | 532 | J | |
| EOFF | VDS = 800 V, VGS = -5V/20V, ID = 40A, RG(ext) =2, L=100H | 24 | J | |
| Reverse Diode Characteristics | VSD | VGS = -5V, ISD = 20A | 4.0 - 4.6 | V |
| IS | VGS = -5V | 55 | A | |
| trr | VGS = -5V, ISD = 40A, VR= 800V, dif/dt = 3400 A/s | 19 | ns | |
| Thermal Characteristics | Rth(j-c) | junction-case | 0.4 - 0.5 | 0C/W |
2410301412_LGE-LGE3M35120Q_C27035429.pdf
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