KY BT138S 800E TRIAC 12A 4 quadrant device for in solid state relays washing machines and massagers

Key Attributes
Model Number: BT138S-800E
Product Custom Attributes
Holding Current (Ih):
25mA
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
12A
Peak Off - State Voltage(Vdrm):
800V
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
BT138S-800E
Package:
TO-252
Product Description

Product Overview

The BT138 Series TRIACs from ShenZhenHanKingyuan Electronic are 12A, 4-quadrant TRIACs designed for AC power control applications. They offer reliable performance with features like low gate trigger voltage and high surge current capability. These TRIACs are suitable for a wide range of applications including washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.

Product Attributes

  • Brand: ShenZhenHanKingyuan Electronic
  • Product Line: BT138 Series
  • Type: TRIACs
  • Quadrants: 4
  • Origin: Shenzhen

Technical Specifications

ParameterConditionsBT138-600BT138-800Unit
Repetitive Peak Off-State Voltage (VDRM, VRRM)600800V
R.M.S On-State Current (IT(RMS))Tc=110C12A
Surge On-State Current (ITSM)Tp=10ms115/120A
It for fusingTp=10ms70As
Average Gate Power Dissipation (PG(AV))Tj=125C1W
Peak Gate Current (IGM)Tj=125C, tp=20us4A
Operating Junction Temperature (Tj)-40~125C
Storage Temperature (TSTG)-40~150C
Repetitive Peak Off-State Current (IDRM)Tj=25C≤5uA
Repetitive Peak Off-State Current (IDRM)Tj=125C≤1mA
Repetitive Peak Reverse Current (IRRM)Tj=25C≤5uA
Repetitive Peak Reverse Current (IRRM)Tj=125C≤1mA
Forward "on" voltage (VTM)IT=35A, tp=380us≤1.55V
Gate trigger voltage (VGT)VD=12V, RL=30≤1.5V
Critical-rate of rise of commutation current (di/dt)I,II,III, Tj=125C, IG=2XIGT, tr ≤100ns, F=100Hz≥50A /us
Critical-rate of rise of commutation current (di/dt)IV, Tj=125C, IG=2XIGT, tr ≤100ns, F=100Hz≥10A /us
Gate trigger current (IGT)I,II,III, VD=12V RL=30≤5≤10mA
Gate trigger current (IGT)I,II,III, VD=12V RL=30≤25≤50mA
Gate trigger current (IGT)IV, VD=12V RL=30≤10≤25mA
Gate trigger current (IGT)IV, VD=12V RL=30≤70≤100mA
Holding current (IH)IT=0.2A≤10≤25mA
Holding current (IH)IT=0.2A≤30≤60mA
Gate non-trigger voltage (VGD)ALL, VD=VDRM TJ=125C,RL=3.3K≥0.2V
Critical-rate of rise of commutation voltage (dv/dt)TJ=125C, VD=2/3VDRM, tp=10ms≥5≥10V/us
Critical-rate of rise of commutation voltage (dv/dt)TJ=125C, VD=2/3VDRM, tp=16.7ms≥50≥200V/us

2410121251_KY-BT138S-800E_C2831696.pdf

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