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quality Silicon Bidirectional Triac LGE BTA16-600B-LGE 16A for Solid State Relay and Inductive Load Switching factory
quality Silicon Bidirectional Triac LGE BTA16-600B-LGE 16A for Solid State Relay and Inductive Load Switching factory

Silicon Bidirectional Triac LGE BTA16-600B-LGE 16A for Solid State Relay and Inductive Load Switching

Key Attributes
Model Number: BTA16-600B-LGE
Product Custom Attributes
Mfr. Part #:
BTA16-600B-LGE
Package:
TO-220AB
Product Description

LGE BTA16/BTB16 16A & SERIES TRIACS

The LGE BTA16/BTB16 series are 16A, & quadrant triacs designed for high-performance switching applications. These silicon bidirectional devices utilize advanced trenching technology, mesa glass passivation, and multi-layer metallized electrodes for superior blocking voltage and high-temperature stability. They are ideal for inductive load switching and ON/OFF functions in various motor control, heating regulation, and solid-state relay applications.

Product Attributes

  • Brand: LGE
  • Revision: 20230619
  • Contact: lge@lgesemi.com
  • Moisture Sensitivity: MSL Level 1, per J-STD-020
  • Terminals: Matte Tin Finish, Solderable per MIL-STD-202 Method 208
  • Case Material: Molded Plastic
  • Molding Compound: UL Flammability Classification Rating 94V-0
  • Case Types: JEDEC TO-220AB, ITO-220AB, TO-263

Technical Specifications

Parameter Symbol BTA/BTB Quadrants (TW/SW/CW/BW) BTA/BTB Quadrants (C/B) Units Conditions
R.M.S. On-State Current IT(RMS) 16 A Tc=80 (BTA) / Tc=90 (BTB)
16 A Tc=80
Non-Repetitive Surge Peak On-State Current ITSM 160 (F=50Hz, T=20ms) / 168 (F=60Hz, T=16.7ms) A Tj initial=25
I2t Value for Fusing I2t 144 As tp=10ms
Critical Rate of Rise of On-State Current di/dt 50 A/s IG=2IGT, tr100ns, F=120Hz, Tj=125
Repetitive peak Off-State voltage VDRM/VRRM 600/800 V Tj=25
Non repetitive surge peak off-state voltage VDSM/VRSM VDRM/VRRM+100 V tp=10ms, Tj=25
Peak Gate Current IGM 4 A tp=20s, Tj=125
Average Gate Power Dissipation PG(AV) 1 W Tj=125
Typical Thermal Resistance (Junction to Ambient) RJA 60 (TO-220AB/ITO-220AB) 45 (TO-263) /W -
Typical Thermal Resistance (Junction to Case (AC)) RJC 1.2 (TO-220AB/TO-263) / 2.1 (TO-220AB Insulated) /W -
Maximum Operating Junction temperature TJ -40~+125 -
Storage temperature range TSTG -40~+150 -
Gate Trigger Current IGT 5 (TW) / 10 (SW) / 35 (CW) / 50 (BW) - mA VD=12V, RL=100 ( quadrant)
- 50 (C) / 100 (B) mA VD=12V, RL=100 ( quadrant)
- 50 (C) / 100 (B) mA VD=12V, RL=100 ( quadrant)
- 25 (C) / 50 (B) mA VD=12V, RL=100 ( quadrant)
Gate Trigger Voltage VGT 1.5 ( Quad) / 1.3 ( Quad) V -
Gate Non-Trigger Voltage VGD 0.2 (MIN) V Tj=125 ( quadrant)
Holding Current IH 5 (TW) / 15 (SW) / 35 (CW) / 50 (BW) - mA IT=0.5A
- 40 (C) / 60 (B) mA IT=0.5A
Latching Current IL 5 (TW) / 25 (SW) / 50 (CW) / 70 (BW) () - mA IG=1.2IGT
20 (TW) / 30 (SW) / 60 (CW) / 80 (BW) () - mA IG=1.2IGT
Latching Current IL - 50 (C) / 70 (B) () / 80 (C) / 120 (B) () mA IG=1.2IGT
Critical Rate of Rise of Off-State Voltage dv/dt 15 (TW) / 100 (SW) / 500 (CW) / 1000 (BW) 200 (C) / 400 (B) V/s VD=2/3VDRM, Tj=125
Critical Rate of Rise of Off-State Voltage at Commutation (dv/dt)c 8.5 (TW/SW) / 10 (CW/BW) 5 (C) / 10 (B) V/s Tj=125
Peak On-State Voltage VTM 1.50 (MAX) V ITM=23A, Tj=25
Threshold Voltage VTO 0.87 (MAX) V Tj=125
Dynamic Resistance Rd 14.6 (MAX) m Tj=125
Repetitive Peak Off-Statte Current IDRM/IRRM 5 (MAX) A VDRM=VRRM, Tj=25
Repetitive Peak Off-Statte Current IDRM/IRRM 1 (MAX) mA VDRM=VRRM, Tj=125

2511181950_LGE-BTA16-600B-LGE_C52766552.pdf

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