General Purpose Semiconductor LangJie BC817 NPN Transistor for Amplification and Switching Circuits
Key Attributes
Model Number:
BC817
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
BC817
Package:
SOT-23
Product Description
Product Overview
This NPN transistor, identified by the marking '6C' and model BC817-40, is a general-purpose semiconductor device designed for various electronic applications. It offers a continuous collector current of 0.5A and a collector dissipation of 0.3W, making it suitable for moderate power switching and amplification tasks.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Plastic surface mounted package
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test conditions | MIN | TYP | MAX | Units |
| Collector-base breakdown voltage | V(BR)CBO | IC= 100A, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40 V, IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEO | VCB=20V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB= 5V, IC=0 | 0.1 | A | ||
| DC current gain | HFE(1) | VCE=1V, IC= 50mA | 200 | 350 | ||
| DC current gain | HFE(2) | VCE=1V, IC= 500mA | 50 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=500 mA, IB= 50mA | 0.6 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=500 mA, IB= 50mA | 1.2 | V | ||
| Transition frequency | fT | VCE=6V, IC= 20mA, f=30MHz | 150 | MHz |
Package Outline: SOT-23 (3 leads)
2410121321_LangJie-BC817_C18195374.pdf
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