N Channel High Voltage Power MOSFET Littelfuse IXTT3N200P3HV Suitable for Laser and X Ray Generation Systems
Key Attributes
Model Number:
IXTT3N200P3HV
Product Custom Attributes
Drain To Source Voltage:
2kV
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8Ω@10V,1.5A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
58pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
520W
Input Capacitance(Ciss):
1.86nF@25V
Gate Charge(Qg):
-
Mfr. Part #:
IXTT3N200P3HV
Product Description
High Voltage Power MOSFET - N-Channel Enhancement Mode
This High Voltage Power MOSFET offers high blocking voltage and is available in high voltage packages for easy mounting, space savings, and high power density. It is suitable for high voltage power supplies, capacitor discharge applications, pulse circuits, and laser and X-ray generation systems.
Product Attributes
- Brand: IXYS
- Copyright: 2015 IXYS CORPORATION
- Patents: U.S. patents covered include 4,860,072, 4,881,106, 4,931,844, 5,017,508, 5,034,796, 5,049,961, 5,063,307, 5,187,117, 5,237,481, 5,381,025, 5,486,715, 6,162,665, 6,259,123 B1, 6,306,728 B1, 6,404,065 B1, 6,534,343, 6,583,505, 6,683,344, 6,710,405 B2, 6,710,463, 6,727,585, 6,759,692, 6,771,478 B2, 7,005,734 B2, 7,063,975 B2, 7,071,537, 7,157,338B2.
Technical Specifications
| Symbol | Test Conditions | Min. | Typ. | Max. | Unit | Notes |
| Maximum Ratings | ||||||
| VDSS | TJ = 25C to 150C | 2000 | V | |||
| VDGR | TJ = 25C to 150C, RGS = 1M | 2000 | V | |||
| VGSS | Continuous | 20 | V | |||
| VGSM | Transient | 30 | V | |||
| ID25 | TC = 25C | 3.0 | A | |||
| ID110 | TC = 110C | 2.6 | A | |||
| IDM | TC = 25C, Pulse Width Limited by TJM | 9.0 | A | |||
| PD | TC = 25C | 520 | W | |||
| TJ | -55 | +150 | C | |||
| TJM | 150 | C | ||||
| Tstg | -55 | +150 | C | |||
| TL | Maximum Lead Temperature for Soldering | 300 | C | |||
| TSOLD | Plastic Body for 10s | 260 | C | |||
| Md | Mounting Torque | 1.13 | Nm/lb.in | |||
| Weight | TO-268HV | 4 | g | |||
| Weight | TO-247HV | 6 | g | |||
| Characteristic Values (TJ = 25C, Unless Otherwise Specified) | ||||||
| BVDSS | VGS = 0V, ID = 250A | 2000 | V | |||
| VGS(th) | VDS = VGS, ID = 250A | 3.0 | 5.0 | V | ||
| IGSS | VGS = 20V, VDS = 0V | 100 | nA | |||
| IDSS | VDS = VDSS, VGS = 0V | 10 | A | |||
| IDSS | TJ = 125C | 250 | A | |||
| RDS(on) | VGS = 10V, ID = 1.5A | 8 | Note 1 | |||
| gfs | VDS = 50V, ID = 1.5A | 2.3 | 3.8 | S | Note 1 | |
| Ciss | VGS = 0V, VDS = 25V, f = 1MHz | 1860 | pF | |||
| Coss | 133 | pF | ||||
| Crss | 58 | pF | ||||
| RGi | Gate Input Resistance | 3.8 | ||||
| Resistive Switching Times | ||||||
| td(on) | VGS = 10V, VDS = 500V, ID = 0.5 ID25, RG = 5 (External) | 21 | ns | |||
| tr | 27 | ns | ||||
| td(off) | 67 | ns | ||||
| tf | 60 | ns | ||||
| Qg(on) | VGS = 10V, VDS = 1kV, ID = 0.5 ID25 | 70 | nC | |||
| Qgs | 8 | nC | ||||
| Qgd | 39 | nC | ||||
| RthJC | 0.24 | C/W | ||||
| RthCS | TO-247HV | 0.21 | C/W | |||
| Source-Drain Diode | ||||||
| IS | VGS = 0V | 3 | A | |||
| ISM | Repetitive, Pulse Width Limited by TJM | 12 | A | |||
| VSD | IF = IS, VGS = 0V | 1.5 | V | Note 1 | ||
| trr | IF = 1.5A, -di/dt = 100A/s, VR = 100V, VGS = 0V | 420 | ns | |||
| QRM | 380 | nC | ||||
| IRM | 1.8 | A | ||||
Note: 1. Pulse test, t 300s, duty cycle, d 2%.
Disclaimer Notice: Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
2411220450_Littelfuse-IXTT3N200P3HV_C7291034.pdf
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