Low RDS ON N Channel SGT MOSFET Leiditech LM5D40N10 Designed for Isolated DC DC Converter Solutions
Key Attributes
Model Number:
LM5D40N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
40A
RDS(on):
20mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
4.1pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.1906nF
Pd - Power Dissipation:
72W
Gate Charge(Qg):
19.8nC@10V
Mfr. Part #:
LM5D40N10
Package:
DFN-8(5x6)
Product Description
Product Overview
The LM5D40N10 is an N-Channel SGT MOSFET designed with advanced technology to deliver low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This device offers enhanced ruggedness, making it suitable for applications requiring improved durability. Key features include extremely low switching loss and excellent stability and uniformity. It is ideal for use in consumer electronic power supplies, motor control, and synchronous-rectification applications, including isolated DC-DC converters.
Product Attributes
- Brand: Leiditech
- Technology: SGT MOSFET
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Package: DFN5*6-8L
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (at Tj=25 unless otherwise noted) | |||||||
| Drain source voltage | VDS | 100 | V | ||||
| Gate source voltage | VGS | 20 | V | ||||
| Continuous drain current1), TC=25 | ID | 40 | A | ||||
| Pulsed drain current2), TC=25 | ID, pulse | 120 | A | ||||
| Power dissipation3), TC=25 | PD | 72 | W | ||||
| Single pulsed avalanche energy5) | EAS | 30 | mJ | ||||
| Operation and storage temperature | TstgTj | -55 | 150 | ||||
| Thermal resistance, junction-case | RJC | 1.74 | /W | ||||
| Thermal resistance, junction-ambient4) | RJA | 62 | /W | ||||
| Electrical Characteristics (at Tj=25 unless otherwise specified) | |||||||
| Drain-source breakdown voltage | BVDSS | VGS=0 V, ID=250 A | 100 | V | |||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250 A | 1.0 | 2.5 | V | ||
| Drain-source on-state resistance | RDS(ON) | VGS=10 V, ID=8 A | 16 | 20 | m | ||
| Drain-source on-state resistance | RDS(ON) | VGS=4.5 V, ID=6 A | 26 | m | |||
| Gate-source leakage current | IGSS | VGS=20 V | 100 | nA | |||
| Drain-source leakage current | IDSS | VDS=100 V, VGS=0 V | 1 | A | |||
| Input capacitance | Ciss | VGS=0 V, VDS=50 V, =1 MHz | 1190.6 | pF | |||
| Output capacitance | Coss | VGS=0 V, VDS=50 V, =1 MHz | 194.6 | pF | |||
| Reverse transfer capacitance | Crss | VGS=0 V, VDS=50 V, =1 MHz | 4.1 | pF | |||
| Turn-on delay time | td(on) | VGS=10 V, VDS=50 V, RG=2.2 , ID=10 A | 17.8 | ns | |||
| Rise time | tr | VGS=10 V, VDS=50 V, RG=2.2 , ID=10 A | 3.9 | ns | |||
| Turn-off delay time | td(off) | VGS=10 V, VDS=50 V, RG=2.2 , ID=10 A | 33.5 | ns | |||
| Fall time | tf | VGS=10 V, VDS=50 V, RG=2.2 , ID=10 A | 3.2 | ns | |||
| Total gate charge | Qg | ID=8 A, VDS=50 V, VGS=10 V | 19.8 | nC | |||
| Gate-source charge | Qgs | ID=8 A, VDS=50 V, VGS=10 V | 2.4 | nC | |||
| Gate-drain charge | Qgd | ID=8 A, VDS=50 V, VGS=10 V | 5.3 | nC | |||
| Gate plateau voltage | Vplateau | ID=8 A, VDS=50 V, VGS=10 V | 3.2 | V | |||
| Diode forward current | IS | VGS<Vth | 40 | A | |||
| Pulsed source current | ISP | 120 | A | ||||
| Diode forward voltage | VSD | IS=8 A, VGS=0 V | 1.3 | V | |||
| Reverse recovery time | trr | IS=8 A, di/dt=100 A/s | 50.2 | ns | |||
| Reverse recovery charge | Qrr | IS=8 A, di/dt=100 A/s | 95.1 | nC | |||
| Peak reverse recovery current | Irrm | IS=8 A, di/dt=100 A/s | 2.5 | A | |||
| Package Mechanical Data (DFN5*6-8L-JQ) | |||||||
| Symbol | Dimension | Min | Max | Inch Min | Inch Max | Unit | |
| A | Body Length | 1.03 | 1.17 | 0.0406 | 0.0461 | mm | |
| b | Lead Width | 0.34 | 0.48 | 0.0134 | 0.0189 | mm | |
| c | Thickness | 0.824 | 0.970 | 0.0324 | 0.0382 | mm | |
| D | Outline Dimension | 4.80 | 5.40 | 0.1890 | 0.2126 | mm | |
| D1 | Internal Dimension | 4.11 | 4.31 | 0.1618 | 0.1697 | mm | |
| D2 | Internal Dimension | 4.80 | 5.00 | 0.1890 | 0.1969 | mm | |
| E | Outline Dimension | 5.95 | 6.15 | 0.2343 | 0.2421 | mm | |
| E1 | Internal Dimension | 5.65 | 5.85 | 0.2224 | 0.2303 | mm | |
| E2 | Internal Dimension | 1.60 | 0.0630 | mm | |||
| e | Pitch | 1.27 BSC | mm | ||||
| L | Lead Length | 0.05 | 0.25 | 0.0020 | 0.0098 | mm | |
| L1 | Internal Dimension | 0.38 | 0.50 | 0.0150 | 0.0197 | mm | |
| L2 | Internal Dimension | 0.38 | 0.50 | 0.0150 | 0.0197 | mm | |
| H | Body Height | 3.30 | 3.50 | 0.1299 | 0.1378 | mm | |
| I | Internal Dimension | 0.18 | 0.0070 | mm | |||
Notes:
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 .
5) VDD=50 V, RG=25 , L=0.3 mH, starting Tj=25 .
2409292333_Leiditech-LM5D40N10_C3647066.pdf
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